Preliminary
Datasheet
RJK03P7DPA
MOS1 30 V, 15 A, 9.4 mΩ max.
MOS2 30 V, 30 A, 5.3 mΩ max.
Built in SBD Dual N-channel Power MOS FET
High Speed Power Switching
Features
Low on-resistance
Capable of 4.5 V gate drive
High density mounting
Pb-free
Halogen-free
R07DS0906EJ0110
Rev.1.10
Nov 01, 2012
Outline
RENESAS Package code: PWSN0008DD-B
(Package name: WPAK-D(3))
2 3 4
D1 D1 D1
9
S1/D2
5
6
7
8
5 6 7 8
1
G1
8
G2
9
4 3 2 1
4
S2 S2 S2
5 6 7
3
2
1
(Bottom View)
1, 8
Gate
2, 3, 4, 9 Drain
5, 6, 7, 9 Source
MOS1
MOS2 and
Schottky Barrier Diode
Absolute Maximum Ratings
(Ta = 25°C)
Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP Note 2
E
AS Note 2
Pch
Note3
Tch
Tstg
Note1
MOS1
30
±20
15
60
15
8.5
7.23
10
150
–55 to +150
MOS2
30
±20
30
120
30
12
14.4
20
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°
C
°
C
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tch = 25C, Rg
50
3. Tc=25C
R07DS0906EJ0110 Rev.1.10
Nov 01, 2012
Page 1 of 10
RJK03P7DPA
Preliminary
Electrical Characteristics
• MOS1
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
30
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
7.8
9.7
36
850
150
80
1.55
7.1
2.3
2.0
2.8
1.7
12.6
3.5
0.84
8.1
Max
—
±0.5
1
2.5
9.4
12.6
—
1190
—
—
3.1
—
—
—
—
—
—
—
1.09
—
Unit
V
A
A
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
= ±20 V, V
DS
= 0
V
DS
= 24 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 7.5 A, V
GS
= 10 V
Note4
I
D
= 7.5 A, V
GS
= 4.5 V
Note4
I
D
= 7.5 A, V
DS
= 5 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1MHz
V
DD
= 10 V
V
GS
= 4.5 V
I
D
= 15 A
V
GS
=10 V, I
D
= 7.5 A
V
DD
10 V
R
L
= 1.3
R
g
= 4.7
IF = 15 A, V
GS
= 0
Note4
IF =15 A, V
GS
= 0
di
F
/ dt = 500 A/s
R07DS0906EJ0110 Rev.1.10
Nov 01, 2012
Page 2 of 10
RJK03P7DPA
• MOS2
Preliminary
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Schottky Barrier diode forward voltage
Body–drain diode reverse
recovery time
Notes: 4. Pulse
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
F
t
rr
Min
30
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
4.4
5.4
65
2110
345
210
1.5
16.5
5.3
5.5
4.7
2.9
35.2
11.4
0.46
6.6
Max
—
±0.5
1
2.5
5.3
7.0
—
2950
—
—
3.0
—
—
—
—
—
—
—
—
—
Unit
V
A
mA
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
= ±20 V, V
DS
= 0
V
DS
= 24 V, V
GS
= 0
V
DS
= 10 V, I
D
=1 mA
I
D
=15 A, V
GS
= 10 V
Note4
I
D
= 15 A, V
GS
= 4.5 V
Note4
I
D
= 15 A, V
DS
= 5 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1MHz
V
DD
= 10 V
V
GS
= 4.5 V
I
D
= 30 A
V
GS
= 10 V, I
D
= 15 A
V
DD
10 V
R
L
= 0.7
R
g
= 4.7
IF = 2 A, V
GS
= 0
Note4
IF = 30 A, V
GS
= 0
di
F
/ dt = 500 A/s
R07DS0906EJ0110 Rev.1.10
Nov 01, 2012
Page 3 of 10
RJK03P7DPA
Preliminary
Main Characteristics
• MOS1
Power vs. Temperature Derating
20
1000
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
15
100
1
10
10
m
s
s
10
5
1 this area is
DS(on)
0
50
100
150
200
Tc = 25 °C
0.1 1 shot Pulse
0.1
1
10
100
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
20
4.5 V
10 V 3.0V
Pulse Test
20
Typical Transfer Characteristics
V
DS
= 5 V
Pulse Test
Drain Current I
D
(A)
2.8 V
12
2.6 V
Drain Current I
D
(A)
16
16
12
8
8
25°C
Tc = 75°C
–25°C
4
4
V
GS
= 2.4 V
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(mV)
200
Pulse Test
Gate to Source Voltage V
GS
(V)
Static Drain to Source On State Resistance
vs. Drain Current
100
Pulse Test
30
V
GS
= 4.5 V
10 V
3
150
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
100
I
D
= 10 A
50
10
5A
2A
0
4
8
12
16
20
1
1
3
10
30
100
300 1000
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
R07DS0906EJ0110 Rev.1.10
Nov 01, 2012
Page 4 of 10
RJK03P7DPA
Static Drain to Source On State Resistance
vs. Temperature
20
Pulse Test
I
D
= 2 A, 5 A, 10 A
10000
3000
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
Capacitance C (pF)
16
1000
300
Ciss
12
V
GS
= 4.5 V
8
10 V
4
0
–25
2 A, 5 A, 10 A
Coss
100
30
10
0
Crss
V
GS
= 0
f = 1 MHz
10
20
30
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Reverse Drain Current vs.
Source to Drain Voltage
20
50
Drain to Source Voltage V
DS
(V)
50
Gate to Source Voltage V
GS
(V)
Reverse Drain Current I
DR
(A)
I
D
= 15 A
40
V
DD
= 25 V
10 V
V
GS
16
10 V
40
5V
Pulse Test
30
V
DS
12
30
20
8
20
V
GS
= 0, –5 V
10
V
DD
= 25 V
10 V
0
4
8
12
16
4
10
0
0
20
0
0.4
0.8
1.2
1.6
2.0
Gate Charge Qg (nc)
Source to Drain Voltage V
SD
(V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
10
Avalanche Energy E
AS
(mJ)
8
I
AP
= 8.5 A
V
DD
= 15 V
duty < 0.1%
Rg
≥
50
Ω
6
4
2
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
R07DS0906EJ0110 Rev.1.10
Nov 01, 2012
Page 5 of 10
京公网安备 11010802033920号
EEWORLD
