RJK0653DPB_13 datasheet, PDF - EEWORLD Datasheet

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RJK0653DPB_13: Description45 A, 60 V, 0.0061 ohm, N-CHANNEL, Si, POWER, MOSFET; Categorysemiconductor Discrete semiconductor; File Size103KB，7 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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RJK0653DPB_13 Overview

45 A, 60 V, 0.0061 ohm, N-CHANNEL, Si, POWER, MOSFET

RJK0653DPB_13 Parametric

Parameter Name	Attribute value
Number of terminals	4
Minimum breakdown voltage	60 V
Processing package description	HALOGEN AND 铅 FREE, SC-100, LFPAK-4
state	DISCONTINUED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	Nickel Palladium
Terminal location	single
Packaging Materials	Plastic/Epoxy
structure	Single WITH BUILT-IN diode
Shell connection	DRAIN
Number of components	1
transistor applications	switch
Transistor component materials	silicon
Channel type	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	universal power supply
Maximum leakage current	45 A
Maximum drain on-resistance	0.0061 ohm
Maximum leakage current pulse	180 A

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Preliminary

Datasheet

RJK0653DPB

60V, 45A, 4.8m max.

Silicon N Channel Power MOS FET

Power Switching

Features



High speed switching

Capable of 4.5 V gate drive

Low drive current

High density mounting



Low on-resistance

DS(on)

= 3.8 m



typ. (at V

= 10 V)



Pb-free



Halogen-free

R07DS0078EJ0200

Rev.2.00

Apr 09, 2013

Outline

RENESAS Package code: PTZZ0005DA-A

(Package name: LFPAK)

1, 2, 3

Source

Gate

Drain

S S S

1 2 3

Application



Switching Mode Power Supply

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Avalanche current

Avalanche energy

Channel dissipation

Channel to Case Thermal Resistance

Channel temperature

Storage temperature

Notes: 1. PW



s,

duty cycle



2. Value at Tch = 25C, Rg





3. Tc = 25C

Symbol

DSS

GSS

D(pulse)Note1

AS Note 2

Pch

Note3

ch-C

Tch

Tstg

Note 2

Ratings

20

180

22.5

1.92

150

–55 to +150

Unit

C/W

C

This product is for the low voltage drive ( 10V).

If the driving voltage is over 10 V under normal conditions, please use the product for high gate to source cutoff voltage

GS(off)

) which characteristics has been improved.

R07DS0078EJ0200 Rev.2.00

Apr 09, 2013

Page 1 of 6

RJK0653DPB_13 Related Products

	RJK0653DPB_13	RJK0653DPB	RJK0653DPB-00-J5
Description	45 A, 60 V, 0.0061 ohm, N-CHANNEL, Si, POWER, MOSFET	45 A, 60 V, 0.0061 ohm, N-CHANNEL, Si, POWER, MOSFET	45 A, 60 V, 0.0061 ohm, N-CHANNEL, Si, POWER, MOSFET
Number of terminals	4	4	4
surface mount	Yes	Yes	YES
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	single	single	SINGLE
Shell connection	DRAIN	DRAIN	DRAIN
Number of components	1	1	1
transistor applications	switch	switch	SWITCHING
Transistor component materials	silicon	silicon	SILICON
Minimum breakdown voltage	60 V	60 V	-
Processing package description	HALOGEN AND 铅 FREE, SC-100, LFPAK-4	HALOGEN AND 铅 FREE, SC-100, LFPAK-4	-
state	DISCONTINUED	DISCONTINUED	-
packaging shape	Rectangle	Rectangle	-
Package Size	SMALL OUTLINE	SMALL OUTLINE	-
terminal coating	Nickel Palladium	Nickel Palladium	-
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	-
structure	Single WITH BUILT-IN diode	Single WITH BUILT-IN diode	-
Channel type	N channel	N channel	-
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR	-
operating mode	ENHANCEMENT	ENHANCEMENT	-
Transistor type	universal power supply	universal power supply	-
Maximum leakage current	45 A	45 A	-
Maximum drain on-resistance	0.0061 ohm	0.0061 ohm	-
Maximum leakage current pulse	180 A	180 A	-

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