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RJK1028DNS_13

Description
100V, 4A, 165m max. Silicon N Channel Power MOS FET Power Switching
File Size114KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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RJK1028DNS_13 Overview

100V, 4A, 165m max. Silicon N Channel Power MOS FET Power Switching

Preliminary
Datasheet
RJK1028DNS
100V, 4A, 165m max.
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 125 m
typ. (at V
GS
= 10 V)
Pb-free
Halogen-free
R07DS0195EJ0400
Rev.4.00
Apr 11, 2013
Outline
RENESAS Package code: PWSN0008JB-A
(Package name: HWSON-8)
5 6 7 8
D D D D
5 6 7 8
4
G
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tch = 25C, Rg
50
3. Tc = 25C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP Note 2
E
AS Note 2
Pch
Note3
ch-c
Note3
Tch
Tstg
Ratings
100
+12, -5
4
12
4
2
0.4
10
12.5
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0195EJ0400 Rev.4.00
Apr 11, 2013
Page 1 of 6

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Description 100V, 4A, 165m max. Silicon N Channel Power MOS FET Power Switching 100V, 4A, 165m max. Silicon N Channel Power MOS FET Power Switching
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