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RJK1051DPB-00-J5

Description
100V, 15A, 39m max. Silicon N Channel Power MOS FET Power Switching
CategoryDiscrete semiconductor    The transistor   
File Size103KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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RJK1051DPB-00-J5 Overview

100V, 15A, 39m max. Silicon N Channel Power MOS FET Power Switching

RJK1051DPB-00-J5 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
Parts packaging codeSC-100
package instructionSMALL OUTLINE, R-PSSO-G4
Contacts4
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)15 A
Maximum drain current (ID)15 A
Maximum drain-source on-resistance0.046 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G4
JESD-609 codee4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)45 W
Maximum pulsed drain current (IDM)60 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceNICKEL PALLADIUM GOLD
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Preliminary
Datasheet
RJK1051DPB
100V, 15A, 39m max.
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 30 m
typ. (at V
GS
= 10 V)
Pb-free
Halogen-free
R07DS0082EJ0200
Rev.2.00
Apr 11, 2013
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
D
5
4
G
3
12
4
1, 2, 3
4
5
Source
Gate
Drain
S S S
1 2 3
Application
Switching Mode Power Supply
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tch = 25C, Rg
50
3. Tc = 25C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP
E
AS Note 2
Pch
Note3
ch-C
Tch
Tstg
Note 2
Ratings
100
20
15
60
15
7.5
5.6
45
2.78
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
This product is for the low voltage drive ( 10V).
If the driving voltage is over 10 V under normal conditions, please use the product for high gate to source cutoff voltage
(V
GS(off)
) which characteristics has been improved.
R07DS0082EJ0200 Rev.2.00
Apr 11, 2013
Page 1 of 6

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