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RJK60S1DPD-00J2

Description
600V - 8A - SJ MOS FET High Speed Power Switching
File Size91KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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RJK60S1DPD-00J2 Overview

600V - 8A - SJ MOS FET High Speed Power Switching

Preliminary Datasheet
RJK60S1DPD
600V - 8A - SJ MOS FET
High Speed Power Switching
Features
Superjunction MOSFET
Low on-resistance
R
DS(on)
= 0.84
typ. (at I
D
= 2.2A, V
GS
= 10 V, Ta = 25C)
High speed switching
t
f
= 61 ns typ. (at I
D
= 2.2 A, V
GS
= 10 V, R
L
= 136
,
Rg = 10
,
Ta = 25C)
R07DS0853EJ0004
Rev.0.04
Nov 30, 2012
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name : MP-3A)
4
1.
2.
3.
4.
S
D
G
12
3
Gate
Drain
Source
Drain
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Tc = 25C
Tc = 100C
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to cse thermal impedance
Channel temperature
Storage temperature
Notes: 1.
2.
3.
4.
Limited by Tch max.
Maximum duty cycle D = 0.5
STch = 25C, Tch
150C
Value at Tc = 25C
Symbol
V
DSS
V
GSS
Note1,2
I
D
Note1,2
I
D
I
D (pulse)
Note1
I
DR
Note1
I
DR (pulse)
Note3
I
AP
Note3
E
AR
Pch
Note4
ch-c
Tch
Tstg
Note1
Ratings
600
+30,
20
8
5
16
8
16
1.1
0.066
31.2
4.0
150
–55 to +150
Unit
V
V
A
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0853EJ0004 Rev.0.04
Nov 30, 2012
Page 1 of 6

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