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RJK60S2DPP-E0

Description
600V - 10A - SJ MOS FET High Speed Power Switching
File Size49KB,4 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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RJK60S2DPP-E0 Overview

600V - 10A - SJ MOS FET High Speed Power Switching

Preliminary Datasheet
RJK60S2DPP-E0
600V - 8A - SJ MOS FET
High Speed Power Switching
Features
Superjunction MOSFET
Low on-resistance
R
DS(on)
= 0.53
Ω
typ. (at I
D
= 4 A, V
GS
= 10 V, Ta = 25°C)
R07DS0742EJ0001
Rev.0.01
Apr 23, 2012
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
D
G
1. Gate
2. Drain
3. Source
1
2 3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Body-drain diode reverse drain current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Limited by Tch max.
2. Value at Tc = 25°C
Symbol
V
DSS
V
GSS
Note1,2
I
D
Note1
I
DR
Pch
Note2
θch-c
Tch
Tstg
Ratings
600
+30,
−20
8
8
26.3
4.75
150
–55 to +150
Unit
V
V
A
A
W
°C/W
°C
°C
R07DS0742EJ0001Rev.0.01
Apr 23, 2012
Page 1 of 3

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