DSEI 12-06A
Fast Recovery
Epitaxial Diode (FRED)
V
RSM
V
640
V
RRM
V
600
DSEI 12-06A
Type
I
FAV
= 14 A
V
RRM
= 600 V
t
rr
= 35
ns
TO-220 AC
C
A
A = Anode, C = Cathode
A
C
C
Symbol
I
FRMS
I
FAVM
I
FRM
I
FSM
Conditions
T
VJ
= T
VJM
T
C
= 00°C; rectangular, d = 0.5
t
p
< 0 µs; rep. rating, pulse width limited by T
VJM
T
VJ
= 45°C;
t = 0 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
25
4
50
00
0
85
95
50
50
36
37
-40...+50
50
-40...+50
A
A
A
A
A
A
2
s
A
2
s
°C
°C
°C
W
Nm
g
Features
• International standard package
JEDEC TO-220 AC
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low I
RM
-values
• Soft recovery behaviour
• Epoxy meets UL 94V-0
Applications
• Antiparallel diode for high frequency
switching devices
• Anti saturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating and melting
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
T
VJ
= 50°C; t = 0 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
I
2
t
T
VJ
= 45°C;
t = 0 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
= 50°C; t = 0 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
Symbol
I
R
T
C
= 25°C
mounting torque
typical
Conditions
V
R
= V
RRM
V
R
= 0.8·V
RRM
V
R
= 0.8·V
RRM
I
F
= 6 A
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 50°C
T
VJ
= 25°C
62
0.4...0.6
2
Characteristic Values
typ.
max.
50
25
3
.5
.7
.2
23.2
2
0.5
60
µA
µA
mA
V
V
V
mW
K/W
K/W
K/W
ns
A
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
• Operating at lower temperature or
space saving by reduced cooling
V
F
V
T0
r
T
R
thJC
R
thCH
R
thJA
t
rr
I
RM
For power-loss calculations only
T
VJ
= T
VJM
I
F
= A; -di/dt = 50 A/µs; V
R
= 30 V; T
VJ
= 25°C
V
R
= 350 V; I
F
= 2 A; -di
F
/dt = 00 A/µs
L < 0.05 µH; T
VJ
= 00°C
35
4
50
4.4
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
-3
2007004
I
FAVM
rating includes reverse blocking losses at T
VJM
. V
R
=
0.8·V
RRM
,
duty cycle d = 0.5
Data according to IEC 60747
DSEI 12-06A
50
1.5
25
T
VJ
= 100°C
V
R
= 50 V
max
40
1.0
Q
r
[µC]
20
T
VJ
= 100°C
V
R
= 350 V
I
F
= 14 A
28 A
14 A
7A
max
20
T
VJ
= 150°C
100°C
25°C
I
RM
[A]
I
F
[A]
30
I
F
= 14 A
28 A
14 A
7A
15
10
0.5
5
typ.
typ.
10
0
0
1
V
F
[V]
2
3
0.0
0
1
10
100
-di
F
/dt
[A/µs]
1000
0
100
200
300
400
-di
F
/dt
[A/µs]
Fig. Forward current
versus voltage drop
1.4
1.2
1.0
t
rr
[ns]
0.3
0.8
0.6
0.4
0.2
I
RM
Q
r
0.1
K
f
0.5
Fig. 2 Recovery charge
versus -di
F
/dt
T
VJ
= 100°C
V
R
= 350 V
20
Fig. 3 Peak reverse current
versus -di
F
/dt
1000
max
0.4
16
800
0.2
I
F
= 14 A
28 A
14 A
7A
V
FR
[V]
12
T
VJ
= 125°C
I
F
= 14 A
600
t
fr
[µs]
8
400
4
typ.
V
FR
400
0
0
100
200
300
di
F
/dt
[A/µs]
t
fr
200
0
40
80
120
T
VJ
[°C]
160
0.0
0
100
200
300
-di
F
/dt
[A/µs]
0
400
Fig. 4 Dynamic parameters versus
junction temperature
2.5
Fig. 5 Recovery time versus -di
F
/dt
Fig. 6 Peak forward voltage
versus di
F
/dt
2.0
Z
thJC
[k/W]
1.5
1.0
0.5
0.0
0.001
DSEI 12-06A
0.01
0.1
t
[s]
1
10
Fig. 7 Transient thermal resistance junction to case
2007004
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
2-3
Microcontroller MCU
京公网安备 11010802033920号
EEWORLD
