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RS1J

Description
SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size38KB,1 Pages
ManufacturerCHONGQING PINGWEI ENTERPRISE CO.,LTD.
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RS1J Overview

SIGNAL DIODE

RS1J Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeSignal diode
CHONGQING PINGYANG ELECTRONICS CO.,LTD.
RS1A THRU RS1K
FAST RECOVERY PLASTIC RECTIFIER
VOLTAGE:50-800V
CURRENT:1.0A
FEATURES
·Ideal
for surface mounted applications
·Low
leakage current
·Glass
passivated junction
SMA(DO-214AC)
.062(1.60)
.055(1.40)
.181(4.60)
.157(4.00)
.012(0.305)
.006(0.152)
.114(2.90)
.098(2.50)
MECHANICAL DATA
·Case:
Molded plastic
·Epoxy:
UL94V-0 rate flame retardant
·Terminals:
Solder plated,solderable per
MIL-STD- 750, Method 2026
·Polarity:
As marked
·Mounting
position:
Any
·Weight:
0.064 grams
.096(2.44)
.078(2.00)
.060((1.52)
.030(0.76)
.008(0.203)
.002(0.051)
.208(5.28)
.188(4.80)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL RS1A
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward rectified Current
at T
A
=75°C
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
Maximum forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@ T
A
=25°C
@ T
A
=125°C
V
RRM
V
RMS
V
DC
I
o
I
FSM
V
F
I
R
50
35
50
RS1B
100
70
100
RS1D
200
140
200
1.0
30
1.3
5.0
50
30
RS1G
400
280
400
RS1J
600
420
600
RS1K
units
800
560
800
V
V
V
A
A
V
µA
°C/W
Typical Thermal Resistance (Note3)
R
θJL
Maximum Reverse Recovery Time (Note 2)
t
rr
150
250
Typical Junction Capacitance (Note1)
C
J
15
Notes: 1.Measured at 1MHz and applied reverse voltage of 4.0 volts
2.Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
3.Thermal Resistance (Junction to Ambient), .24in
2
(6.0mm
2
) copper pads to each terminal
500
nS
pF
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