RS1K datasheet, PDF - EEWORLD Datasheet

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RS1K: Description1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC; CategoryDiscrete semiconductor diode; File Size31KB，2 Pages; ManufacturerHY Electronic; Websitehttp://www.hygroup.com.tw

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RS1K Overview

1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC

RS1K Parametric

Parameter Name	Attribute value
Maker	HY Electronic
package instruction	R-PDSO-C2
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-PDSO-C2
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum repetitive peak reverse voltage	800 V
Maximum reverse recovery time	0.5 µs
surface mount	YES
Terminal form	C BEND
Terminal location	DUAL

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RS1A thru RS1M

SURFACE MOUNT

GLASS FAST RECOVERY RECTIFIERS

FEATURES

●

Fast switching for high efficiency

●

Low cost

●

Diffused junction

●

Low reverse leakage current

●

Low forward voltage drop

●

High current capability

●

The plastic material carries UL recognition 94V-0

REVERSE VOLTAGE

- 50

to

1000

Volts

FORWARD CURRENT

- 1.0

Amperes

SMA

.062(1.60)

.055(1.40)

.114(2.90)

.098(2.50)

.181(4.60)

.157(4.00)

.012(.305)

.006(.152)

.103(2.62)

.079(2.00)

MECHANICAL DATA

●

Case： Molded Plastic

●

Polarity: lndicated by cathode band

●

Weight: 0.002 ounces,0.064 grams

●

Mounting position: Any

.060(1.52)

.030(0.76)

.208(5.28)

.188(4.80)

.008(.203)

.002(.051)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave ,60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward

Rectified Current

Peak Forward Surage Current

8.3ms Single Half Sine-Wave

Super Imposed on Rated Load(JEDEC Method)

Peak Forward Voltage at 1.0A DC

Maximum DC Reverse Current

at Rated DC Blocking Voltage

@T

J

=25℃

@T

J

=100℃

@T

A

=75

℃

SYMBOL

V

RRM

V

RMS

V

DC

I

(AV)

RS1A

50

35

50

RS1B

100

70

100

RS1D

200

140

200

RS1G

400

280

400

1.0

RS1J

600

420

600

RS1K

800

560

800

RS1M

1000

700

1000

UNIT

V

A

I

FSM

V

F

I

R

T

RR

C

J

R

θJA

T

J

T

STG

150

25

30

1.3

5.0

100

250

15

25

-50 to +150

500

A

V

uA

nS

pF

℃/W

℃

Maximum Reverse Recovery Time (Note 1)

Tyical Junction Capacitance (Note2)

Tyical Thermal Resistance (Note3)

Operating Temperature Range

Storage Temperature Range

NOTES: 1.Measured with I

F

=0.5A,I

R

=1A,I

RR

=0.25A

2.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC

3.Thermal resistance junction of ambient.

~ 61 ~

RS1K Related Products

	RS1K	RS1J	RS1M
Description	1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC	SIGNAL DIODE	1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC
Maker	HY Electronic	HY Electronic	HY Electronic
package instruction	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2
Reach Compliance Code	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99
Configuration	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 code	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2
Number of components	1	1	1
Number of terminals	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C
Maximum output current	1 A	1 A	1 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Maximum repetitive peak reverse voltage	800 V	800 V	1000 V
Maximum reverse recovery time	0.5 µs	0.5 µs	0.5 µs
surface mount	YES	YES	YES
Terminal form	C BEND	C BEND	C BEND
Terminal location	DUAL	DUAL	DUAL

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