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5962-9561316HYC

Description
Standard SRAM, 512KX8, 100ns, CMOS, CDIP32, CERAMIC, DIP-32
Categorystorage    storage   
File Size3MB,939 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

5962-9561316HYC Overview

Standard SRAM, 512KX8, 100ns, CMOS, CDIP32, CERAMIC, DIP-32

5962-9561316HYC Parametric

Parameter NameAttribute value
package instructionCERAMIC, DIP-32
Reach Compliance Codeunknown
Maximum access time100 ns
I/O typeCOMMON
JESD-30 codeR-CDIP-T32
JESD-609 codee4
length41.525 mm
memory density4194304 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals32
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize512KX8
Output characteristics3-STATE
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDIP
Encapsulate equivalent codeDIP32,.6
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
power supply5 V
Certification statusNot Qualified
Filter levelMIL-STD-883
Maximum seat height5.13 mm
Maximum standby current0.0002 A
Minimum standby current2 V
Maximum slew rate0.05 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceGOLD
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
width15.24 mm
NOT MEASUREMENT
SENSITIVE
MIL-HDBK-103AP
6 MARCH 2014
SUPERSEDING
MIL-HDBK-103AN
12 SEPTEMBER 2013
DEPARTMENT OF DEFENSE
HANDBOOK
LIST OF STANDARD MICROCIRCUIT DRAWINGS
This handbook is for guidance only. Do not cite this document
as a requirement.
AMSC N/A
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