S186P
Vishay Semiconductors
Silicon PIN Photodiode
Description
S186P is a high speed and high sensitive PIN photo-
diode in a flat side view plastic package. The epoxy
package itself is an IR filter, spectrally matched to
GaAs or GaAs on GaAlAs IR emitters (λ
p
≥
900 nm).
The large active area combined with a flat case gives
a high sensitivity at a wide viewing angle
Features
• Fast response times
• Small junction capacitance
•
•
•
•
•
•
•
High radiant sensitivity
Large radiant sensitive area A = 7.5 mm
2
Wide angle of half sensitivity
ϕ
= ± 65 °
Plastic case with IR filter (950 mm)
Suitable for near infrared radiation
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
94 8632
Applications
High speed photo detector
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse Voltage
Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/
Ambient
t
≤
5s
T
amb
≤
25 °C
Test condition
Symbol
V
R
P
V
T
j
T
stg
T
sd
R
thJA
Value
60
215
100
- 55 to + 100
260
350
Unit
V
mW
°C
°C
°C
K/W
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Breakdown Voltage
Reverse Dark Current
Diode capacitance
Test condition
I
R
= 100
µA,
E = 0
V
R
= 10 V, E = 0
V
R
= 0 V, f = 1 MHz, E = 0
V
R
= 3 V, f = 1 MHz, E = 0
Symbol
V
(BR)
I
ro
C
D
C
D
Min
60
2
70
25
40
30
Typ.
Max
Unit
V
nA
pF
pF
Document Number 81536
Rev. 1.3, 08-Mar-05
www.vishay.com
1
S186P
Vishay Semiconductors
Optical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Open Circuit Voltage
Short Circuit Current
Reverse Light Current
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Noise Equivalent Power
Rise Time
Fall Time
V
R
= 20 V,
λ
= 950 nm
V
R
= 10 V, R
L
= 1 kΩ,
λ
= 820 nm
V
R
= 10 V, R
L
= 1 kΩ,
λ
= 820 nm
Test condition
E
e
= 1 mW/cm
2
,
λ
= 950 nm
E
e
= 1 mW/cm
2
,
λ
= 950 nm
E
e
= 1 mW/cm
2
,
λ
= 950 nm,
V
R
= 5 V
Symbol
V
o
I
k
I
ra
ϕ
λ
p
λ
0.5
NEP
t
r
t
f
43
Min
Typ.
350
38
45
± 65
950
870 to 1050
4 x 10
-14
100
100
Max
Unit
mV
µA
µA
deg
nm
nm
W/√ Hz
ns
ns
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
1000
I
ro
- Reverse Dark Current ( nA )
I
ra
– Reverse Light Current (µA)
1000
100
100
10
10
1
λ
=950nm
V
R
=5V
V
R
= 10 V
1
20
40
60
80
100
T
amb
- Ambient Temperature (
°
C )
0.1
0.01
94 8414
0.1
1
10
94 8403
E
e
– Irradiance ( mW/ cm
2
)
Figure 1. Reverse Dark Current vs. Ambient Temperature
Figure 3. Reverse Light Current vs. Irradiance
I
ra rel
- Relative Reverse Light Current
1.4
I
ra
– Reverse Light Current (
µ
A)
100
1mW/cm
2
0.5 mW/cm
2
1.2
V
R
= 5 V
λ
= 950 nm
λ
= 950 nm
10
0.2 mW/cm
2
0.1 mW/cm
2
0.05mW/cm
2
0.02mW/cm
2
1.0
0.8
0.6
0
1
20
40
60
80
100
94 8415
0.1
1
10
100
94
8409
T
amb
- Ambient Temperature (
°
C )
V
R
– Reverse Voltage ( V )
Figure 2. Relative Reverse Light Current vs. Ambient Temperature
Figure 4. Reverse Light Current vs. Reverse Voltage
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2
Document Number 81536
Rev. 1.3, 08-Mar-05
S186P
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 81536
Rev. 1.3, 08-Mar-05
www.vishay.com
5
PCB Design
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