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S852TF

Description
Silicon NPN Planar RF Transistor
CategoryDiscrete semiconductor    The transistor   
File Size144KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

S852TF Overview

Silicon NPN Planar RF Transistor

S852TF Parametric

Parameter NameAttribute value
MakerVishay
Reach Compliance Codeunknow
Maximum collector current (IC)0.008 A
ConfigurationSingle
Minimum DC current gain (hFE)40
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.03 W
surface mountYES
S852TF
Vishay Semiconductors
Silicon NPN Planar RF Transistor
Description
The main purpose of this bipolar transistor is broad-
band amplification up to 2 GHz. In the space-saving
3-pin surface-mount SOT-490 package electrical per-
formance and reliability are taken to a new level cov-
ering a smaller footprint on PC boards than previous
packages.
In addition to space savings, the SOT-490 provides a
higher level of reliability than other 3-pin packages,
such as more resistance to moisture.
1
2
3
16867
Electrostatic sensitive device.
Observe precautions for handling.
Due to the short length of its leads the SOT-490 is
also reducing package inductances resulting in some
better electrical performance. All of these aspects
make this device an ideal choice for demanding RF
applications.
Applications
For low noise and high gain broadband amplifiers at
collector currents from 0.2 mA to 5 mA.
Features
Low supply voltage
Low current consumption
e3
Low noise figure
50
Ω
input impedance at 945 MHz
High power gain
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
Typ:
S852TF
Case:
SOT-490 Plastic case
Weight:
approx. 2.5 mg
Pinning:
1 = Collector, 2 = Base, 3 = Emitter
Parts Table
Part
S852TF
52
Marking
SOT-490
Package
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
T
amb
125 °C
Test condition
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
12
6
2
8
30
150
- 65 to + 150
Unit
V
V
V
mA
mW
°C
°C
Document Number 85104
Rev. 1.3, 02-May-05
www.vishay.com
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