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HA1714D

Description
Variable Capacitance Diode, 12pF C(T), 30V, Silicon, Hyperabrupt
CategoryDiscrete semiconductor    diode   
File Size121KB,2 Pages
ManufacturerMsi Electronics Inc
Download Datasheet Parametric View All

HA1714D Overview

Variable Capacitance Diode, 12pF C(T), 30V, Silicon, Hyperabrupt

HA1714D Parametric

Parameter NameAttribute value
package instructionO-CEMW-N2
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage30 V
ConfigurationSINGLE
Diode Capacitance Tolerance10%
Minimum diode capacitance ratio7
Nominal diode capacitance12 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeO-CEMW-N2
Number of components1
Number of terminals2
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formMICROWAVE
Certification statusNot Qualified
minimum quality factor900
Maximum repetitive peak reverse voltage30 V
Maximum reverse current0.02 µA
Reverse test voltage25 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Varactor Diode ClassificationHYPERABRUPT

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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