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SB320B-G

Description
3 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD
CategoryDiscrete semiconductor    diode   
File Size53KB,3 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
Environmental Compliance
Download Datasheet Parametric View All

SB320B-G Overview

3 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD

SB320B-G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerComchip Technology
package instructionO-PALF-W2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresFREE WHEELING DIODE
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.5 V
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current80 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage20 V
Maximum reverse current500 µA
surface mountNO
technologySCHOTTKY
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Leaded Schottky Barrier Rectifiers
Comchip
SMD Diode Specialist
SB320-G Thru. SB3100-G
Voltage: 20 to 100 V
Current: 3.0 A
RoHS Device
DO-201AD
Features
-Low
drop down voltage.
-Metal-Semiconductor junction with guard ring
-High
surge current capability
-Silicon
epitaxial planar chips.
-For use in low voltage, high efficiency inverters,
free wheeling, and polarity protection applications
-Lead-free
part, meet RoHS requirements.
0.375(9.5)
0.287(7.3)
1.0(25.4) Min.
0.210(5.3)
0.189(4.8)
Mechanical data
-Epoxy:
UL94-V0 rated flame retardant
-Case:
Molded plastic body DO-201AD
-Terminals:
Solderable per MIL-STD-750 Method 2026
-Polarity:
Color band denotes cathode end
-Mounting
Position: Any
-Weight:
1.12grams
0.052(1.30)
0.048(1.20)
1.0(25.4) Min.
Dimensions in inches and (millimeter)
Electrical Characteristics (at T
A
=25°C unless otherwise noted)
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375” (9.5mm) lead length at TA=100°C, See Figure 1
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
SB
320-G
20
14
20
SB
340-G
40
28
40
SB
345-G
45
30
45
SB
350-G
50
35
50
3.0
SB
360-G
60
42
60
SB
380-G
80
56
80
SB
3100-G
100
70
100
Unit
V
V
V
A
Peak forward surge current
8.3ms single half sine-wave superimposed on rated load
(JEDEC method)
TL=110°C
I
FSM
V
F
80
A
V
mA
Maximum forward voltage at 3.0A
Maximum DC reverse current
At rated DC blocking voltage
T
A
=25°C
T
A
=100°C
0.50
0.5
0.70
0.85
I
R
20
C
J
R
θJA
R
θJL
T
J
T
STG
-55 to +125
-55 to +150
250
40.0
20.0
-55 to +150
10
90
Typical junction capacitance (Note 1)
Typical t
hermal resistance
(Note 2)
Operating junction temperature range
Storage temperature range
NOTES:
pF
°C/W
°C
°C
1.
Measured at 1.0MHz and applied reverse voltage of 4.0 Volts
.
2. Thermal resistance junction to ambient and junction to lead.
REV:B
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