Leaded Schottky Barrier Rectifiers
Comchip
SMD Diode Specialist
SB520-G Thru. SB5100-G
Voltage: 20 to 100 V
Current: 5.0 A
RoHS Device
DO-201AD
Features
-Low
drop down voltage.
-Metal-Semiconductor junction with guard ring
-High
surge current capability
-Silicon
epitaxial planar chips.
-For use in low voltage, high efficiency inverters,
free wheeling, and polarity protection applications
-Lead-free
part, meet RoHS requirements.
0.375(9.5)
0.287(7.3)
1.0(25.4) Min.
0.210(5.3)
0.189(4.8)
Mechanical data
-Epoxy:
UL94-V0 rated flame retardant
-Case:
Molded plastic body DO-201AD
-Terminals:
Solderable per MIL-STD-750 Method 2026
-Polarity:
Color band denotes cathode end
-Mounting
Position: Any
-Weight:
1.12grams
0.052(1.30)
0.048(1.20)
1.0(25.4) Min.
Dimensions in inches and (millimeter)
Electrical Characteristics (at T
A
=25°C unless otherwise noted)
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375” (12.7mm) lead length at TA=75°C, See Figure 1
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
SB
520-G
20
14
20
SB
540-G
40
28
40
SB
545-G
45
30
45
SB
550-G
50
35
50
5.0
SB
560-G
60
42
60
SB
580-G
80
56
80
SB
5100-G
100
70
100
Unit
V
V
V
A
Peak forward surge current
8.3ms single half sine-wave superimposed on rated load
(JEDEC method)
TL=110°C
I
FSM
V
F
I
R
I
R
C
J
R
θJA
R
θJL
T
J
T
STG
-65 to +125
50
350
100
A
V
mA
30
135
pF
°C/W
-65 to +150
°C
°C
Maximum forward voltage at 5.0A (Note 1)
Maximum DC reverse current
At rated DC blocking voltage
T
A
=25°C
T
A
=100°C
0.55
0.5
0.70
0.85
Typical junction capacitance (Note 2)
Typical t
hermal resistance
(Note 3)
Operating junction temperature range
Storage temperature range
NOTES:
35.0
15.0
-65 to +150
1.
Pulse test 300µs pulse width, 1% duty cycle.
2.
Measured at 1.0MHz and applied reverse voltage of 4.0 Volts
.
3. Thermal resistance junction to ambient and from junction to lead P.C.B mounted 0.500”(12.7mm)lead length with 2.5*2.5”(63.5*63.5mm) copper pad..
REV:A
QW-BB051
Page 1
Comchip Technology CO., LTD.
Leaded Schottky Barrier Rectifiers
Comchip
SMD Diode Specialist
RATING AND CHARACTERISTIC CURVES (SB520-G Thru. SB5100-G)
Fig.1- Forward Current Derating Curve
6.0
Fig.2 - Maximum Non-repetitive Peak
Forward Surge Current
200
Peak Forward Surge Current, (A)
TL=110°C
8.3mS single half sine-wave
(JEDEC Method)
Average Forward Current, (A)
5.0
4.0
150
3.0
SB520-G ~ SB545-G
100
SB520-G ~ SB545-G
2.0
SB550-G ~ SB5100-G
50
SB550-G ~ SB5100-G
1.0
0
0
single phase half wave 60Hz
resistive or inductive load
3.75”(9.5mm) lead length
25
50
75
100
125
150
175
0
1
10
Number of Cycles at 60Hz
100
Lead Temperature, ( °C )
Fig.3 - Typical Instantaneous Forward
Characteristics
50
Instantaneous Forward Current, (A)
pulse width =300µS
1% duty cycle, Tj=25°C
Fig.4A - Typical Reverse Characteristics
100
SB520-G ~ SB545-G
10
Instantaneous Reverse Current, (mA)
10
TJ=125°C
SB580-G ~ SB5100-G
1.0
TJ=100°C
1.0
SB550-G ~ SB560-G
0.1
SB520-G ~ SB545-G
0.1
0.01
0.001
TJ=25°C
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
120
140
Instantaneous Forward Voltage, (V)
Percent of Rated Peak Reverse Voltage, (%)
Fig.5 - Typical Junction Capacitance
1000
TJ=25°C
f=1.0MHz
Vsig=50mvp-p
SB520-G ~ SB545-G
Fig. 4B - Typeical Reverse Characteristic
10
5
Instantaneous Reverse Current, (uA)
SB320-G ~ SB3100-G
TJ=150°C
Junction Capacitacne, (pF)
10
4
TJ=125°C
3
SB550-G ~ SB5100-G
10
10
2
100
TJ=75°C
10
1
TJ=25°C
10
0.1
1.0
10
Reverse Voltage, (V)
100
1
0
20
40
60
80
100
REV:A
Percent of Rated Peak Reverse Voltage, ( %)
Page 2
QW-BB051
Comchip Technology CO., LTD.
Microcontroller MCU
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