SBL16xxCT, SBLF16xxCT & SBLB16xxCTSeries
Vishay Semiconductors
formerly General Semiconductor
Dual Schottky Barrier Rectifier
Reverse Voltage
30 and 40V
Forward Current
16A
ITO-220AB (SBLF16xxCT)
0.405 (10.27)
0.383 (9.72)
0.188 (4.77)
0.172 (4.36)
0.110 (2.80)
0.100 (2.54)
0.140 (3.56)
DIA.
0.130 (3.30)
0.185 (4.70)
0.175 (4.44)
0.154 (3.91)
0.370 (9.40)
0.360 (9.14)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.410 (10.41)
0.390 (9.91)
1
0.160 (4.06)
0.140 (3.56)
PIN
2
3
0.603 (15.32)
0.573 (14.55)
0.560 (14.22)
0.530 (13.46)
0.055 (1.39)
0.045 (1.14)
1
TO-220AB (SBL16xxCT)
0.415 (10.54) MAX.
0.600 (15.5)
0.580 (14.5)
PIN
2
3
0.131 (3.39)
DIA.
0.122 (3.08)
0.676 (17.2)
0.646 (16.4)
0.350 (8.89)
0.330 (8.38)
0.191 (4.85)
0.171 (4.35)
0.060 (1.52)
PIN 1
PIN 3
PIN 2
0.635 (16.13)
0.625 (15.87)
0.350 (8.89)
0.330 (8.38)
0.110 (2.80)
0.100 (2.54)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.105 (2.67)
0.095 (2.41)
0.037 (0.94)
0.027 (0.69)
0.022 (0.55)
0.014 (0.36)
PIN 1
PIN 3
PIN 2
CASE
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
TO-263AB (SBLB16xxCT)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN
K
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout TO-263AB
0.42
(10.66)
0.360 (9.14)
0.33
(8.38)
0.63
(17.02)
0.055 (1.40)
0.047 (1.19)
0.624 (15.85)
1
K
2
0.591 (15.00)
0-0.01 (0-0.254)
0.110 (2.79)
0.090 (2.29)
0.320 (8.13)
Dimensions in inches
and (millimeters)
0.08
(2.032)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
PIN 1
PIN 2
K - HEATSINK
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
Features
0.24
(6.096)
0.12
(3.05)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
•
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
•
Dual rectifier construction, positive center tap
•
Metal silicon junction, majority carrier conduction
•
Low power loss, high efficiency
•
Guardring for overvoltage protection
•
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
•
High temperature soldering guaranteed:
250°C/10 seconds, 0.25" (6.35mm) from case
Document Number 88727
11-Feb-02
Mechanical Data
Case:
JEDEC TO-220AB, ITO-220AB & TO-263AB
molded plastic body
Terminals:
Plated leads, solderable per
MIL-STD-750, Method 2026
Polarity:
As marked
Mounting Position:
Any
Mounting Torque:
10 in-lbs maximum
Weight:
0.08 oz., 2.24 g
www.vishay.com
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SBL16xxCT, SBLF16xxCT & SBLB16xxCTSeries
Vishay Semiconductors
formerly General Semiconductor
Maximum Ratings
Parameter
(T
C
= 25°C unless otherwise noted)
Symbol
V
RRM
V
RWM
V
DC
I
F(AV)
SBL1630CT
30
21
30
16
8.0
250
SBL1640CT
40
28
40
Unit
V
V
V
A
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Total device
at T
C
= 95°C
Per leg
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method) per leg
Operating junction and storage temperature range
RMS Isolation voltage (SBLF type only) from terminals
to heatsink with t = 1.0 second, RH
≤
30%
I
FSM
T
J
, T
STG
V
ISOL
A
°C
V
–40 to +125
4500
3500
1500
(NOTE 1)
(NOTE 2)
(NOTE 3)
Electrical Characteristics
(T
Parameter
C
= 25°C unless otherwise noted)
Symbol
V
F
I
R
Value
0.55
0.5
50
Unit
V
mA
Maximum instantaneous forward voltage per leg
at 8.0 A
(Note 4)
Maximum instantaneous reverse current
T
C
= 25°C
at rated DC blocking voltage per leg
(Note 4)
T
C
= 100°C
Thermal Characteristics
(T
Parameter
C
= 25°C unless otherwise noted)
Symbol
R
ΘJC
MBR
2.0
MBRF
4.0
MBRB
2.0
Unit
°C/W
Typical thermal resistance from junction to case per leg
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is
≤
4.9 mm (0.19”)
(4) Pulse test: 300µs pulse width, 1% duty cycle
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Document Number 88727
11-Feb-02
SBL16xxCT, SBLF16xxCT & SBLB16xxCTSeries
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Forward Current Derating Curve
20
Resistive or Inductive Load
300
Maximum Non-Repetitive Peak
Forward Surge Current Per Leg
Peak Forward Surge Current (A)
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
Average Forward Current (A)
16
250
200
150
12
8
100
50
0
4
0
0
50
100
150
1
10
100
Case Temperature (°C)
Number of Cycles at 60 H
Z
Typical Instantaneous
Forward Characteristics Per Leg
T
J
= 125°C
Pulse Width = 300µs
1% Duty Cycle
Typical Reverse Characteristics Per Leg
I
R
– Instantaneous Reverse Current (mA)
50
10
T
J
= 125°C
1.0
75°C
0.1
I
F
– Instantaneous Forward Current (A)
50
10
1.0
T
J
= 25°C
0.1
0.01
25°C
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.001
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Typical Junction Capacitance Per Leg
4,000
100
Typical Transient
Thermal Impedance Per Leg
Transient Thermal Impedance (°C/W)
pF – Junction Capacitance
T
J
= 25°C
f = 1.0 MH
Z
V
sig
= 50mVp-p
1,000
10
1
100
0.1
1
10
100
0.1
0.01
0.1
1
10
100
Reverse Voltage (V)
Document Number 88727
11-Feb-02
t – Pulse Duration (sec.)
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