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SBL25L20CT

Description
12.5 A, 20 V, SILICON, RECTIFIER DIODE, TO-220AB
CategoryDiscrete semiconductor    diode   
File Size155KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

SBL25L20CT Overview

12.5 A, 20 V, SILICON, RECTIFIER DIODE, TO-220AB

SBL25L20CT Parametric

Parameter NameAttribute value
Reach Compliance Codeunknow
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.49 V
Maximum non-repetitive peak forward current180 A
Maximum operating temperature125 °C
Maximum output current25 A
Maximum repetitive peak reverse voltage20 V
surface mountNO
technologySCHOTTKY
Base Number Matches1
SBL(F,B)25L20CT thru SBL(F,B)25L30CT
Vishay General Semiconductor
Dual Low V
F
Common Cathode Schottky Rectifier
TO-220AB
ITO-220AB
FEATURES
• Low power loss, high efficiency
• Very low forward voltage drop
• High forward surge capability
• High frequency operation
3
2
SBL25LxxCT
PIN 1
PIN 3
PIN 2
CASE
3
1
SBLF25LxxCT
PIN 1
PIN 3
PIN 2
2
1
• Meets MSL level 1, per J-STD-020, LF
maximum peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
TO-263AB
K
2
1
SBLB25LxxCT
PIN 1
PIN 2
K
HEATSINK
For use in low voltage, high frequency inverters,
switching mode power supplies, freewheeling diodes,
OR-ing diodes, dc-to-dc converters and polarity
protection application.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
max.
12.5 A x 2
20 V to 30 V
180 A
0.39 V
150 °C
Case:
TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified
current at T
C
= 95 °C
total device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
STG
V
AC
SBL25L20CT
20
SBL25L25CT
25
25
12.5
180
- 55 to + 150
1500
SBL25L30CT
30
UNIT
V
A
A
°C
V
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
Document Number: 88731
Revision: 08-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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