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SBL3030CT

Description
30 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size171KB,2 Pages
ManufacturerSIRECT
Websitehttp://www.sirectsemi.com/
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SBL3030CT Overview

30 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB

E
L
E
C
T
R
O
N
I
C
SBL3030CT
Power Schottky Rectifier - 30Amp 30Volt
Features
-Plastic package has Underwriters Laboratory Flammability Classifications 94V-0
-High Junction Temperature Capability
-Low forward voltage, high current capability
-High surge capacity
-Low power loss, high efficiency
TO-220AB
L
B
C
D
K
E
A
M
Application
-Switching-Mode Power Supply
-Solar-System Control Box
Absolute maximum ratings
Symbol
Ratings
30
30
350
0.35
-50 to +150
-50 to +125
Unit
A
V
A
V
ºC
ºC
Conditions
Average Forward Current
Repetitive Peak Reverse Voltage
Peak Forward Surge Current
Forward Voltage Drop
Operating Temperature
Storage Temperature
I
F(AV)
V
RRM
I
FSM
V
F(max)
T
j
T
stg
F
O
I
J
G
H
A1
H
N
K
A2
Electrical characteristics
Parameters
Maximum Instantaneous
Forward Voltage
Maximum Reverse Leakage
Current
Peak Repetitive Reverse
Current
Non Repetitive Peak Reverse
Current
Maximum Voltage Rate of
Change
Typical Thermal Resistance,
Junction to Case
Symbol
Ratings
0.48V
0.35V
1.0mA
1.0A
3.0A
10,000 V/μs
2.2
ºC/W
Conditions
Tc = 25ºC
Tc = 125ºC
Tc = 25ºC
tp = 2μs square
F = 1kHz
tp = 100μs
square
Rated V
R
Per diode
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
DIMENSIONS
INCHES
MM
MAX
MIN
MAX
MIN
.579
.606
14.70 15.40
.392
.411
9.95
10.45
.104
.116
2.65
2.95
.248
.272
6.30
6.90
.325
.350
8.25
8.90
.126
.157
3.20
4.00
.492
.551
12.50 14.00
.096
.108
2.45
2.75
.028
.039
0.70
1.00
.010
.022
0.25
0.55
.146
.157
3.70
4.00
.167
.187
4.25
4.75
.045
.057
1.15
1.45
.089
.114
2.25
2.90
.047
.055
1.20
1.40
NOTE
V
F
I
R
I
RRM
I
RSM
dv/dt
R
θ
(j-c)
Note: Pulse Test : 380μs pulse width, 2% duty cycle
August 2008 / Rev.6.1
http:// www.sirectsemi.com
1

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