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SBL30U100

Description
Voltage 100v 30.0 Amp Low VF Trench MOS Barrier Schottky Recifier
CategoryDiscrete semiconductor    diode   
File Size147KB,2 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Environmental Compliance
Download Datasheet Parametric View All

SBL30U100 Overview

Voltage 100v 30.0 Amp Low VF Trench MOS Barrier Schottky Recifier

SBL30U100 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSECOS
package instructionR-PSFM-T3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY, LOW POWER LOSS
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.74 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current200 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current15 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage100 V
Maximum reverse current150 µA
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
SBL30U100
Elektronische Bauelemente
Voltage 100V 30.0 Amp
Low VF Trench MOS Barrier Schottky Rectifier
RoHS Compliant Product
A suffix of “-C” specifies halogen free
TO-220
FEATURES
Trench MOS Schottky technology
Low forward voltage drop, low power losses.
High current capability
High reliability
High surge current capability
Epitaxial construction
B
N
D
E
M
P
H
J
K
L
Millimeter
Min.
Max.
14.22
16.51
9.65
10.67
12.50
14.75
3.56
4.90
0.51
1.45
2.03
2.92
0.31
0.76
3.5
4.5
A
O
C
G
F
REF.
J
K
L
M
N
O
P
Millimeter
Min.
Max.
0.7
1.78
0.38
1.02
2.39
2.69
2.50
3.43
3.10
4.09
8.38
9.65
0.89
1.45
MECHANICAL DATA
Case: Molded plastic
Epoxy: UL94V-0 rate flame retardant
Lead: Lead solderable per MIL-STD-202
method 208 guaranteed
Polarity: As Marked
Mounting position: Any
Weight: 1.98 g (Approximate)
L
REF.
A
B
C
D
E
F
G
H
1
3
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25° ambient temperature unless otherwise s pecified. Single phase half wave, 60Hz, resistive or inductive load.
C
For capacitive load, de-rate current by 20%.)
Parameter
Maximum Recurrent Peak Reverse Voltage
Working Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current
Voltage Rate of Chance (Rated V
R
)
Typical Thermal Resistance
Operating and Storage Temperature Range
(Per Leg)
(Per Device)
Symbol
V
RRM
V
RSM
V
DC
I
F
I
FSM
dv/dt
R
θ
JC
T
J
,T
STG
Rating
100
100
100
15
30
200
10000
2
-40~150
Unit
V
V
V
A
A
V /
µs
° /W
C
°
C
Peak Forward Surge Current, 8.3 ms single half sine-wave
ELECTRICAL CHARACTERISTICS
Parameter
Maximum Instantaneous Forward
Voltage
Maximum DC Reverse Current
2
at Rated DC Blocking Voltage
Typical Junction Capacitance
1
Symbol
Typ.
0.45
0.61
0.71
0.66
-
-
630
Max.
0.48
0.64
0.74
-
0.15
10
-
Unit
V
Test Condition
I
F
= 3A, T
J
= 25°
C
I
F
= 10A, T
J
= 25°
C
I
F
= 15 A, T
J
= 25°
C
I
F
= 15 A, T
J
= 125°
C
C
T
J
=25°
T
J
=100°
C
V
F
I
R
C
J
mA
pF
NOTES:
1. Measured at 1MHz and applied reverse voltage of 5.0V D.C.
2. Pulse Test:Pulse Width = 300
µs,
Duty Cycle
2.0%.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
22-May-2013 Rev.A
Page 1 of 2

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