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SBR10150CTF

Description
10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size85KB,3 Pages
ManufacturerETC1
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SBR10150CTF Overview

10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB

SBR10150CT
SBR10150CTF
SBR10150CTI
SBR10150CTB
Using state-of-the-art SBR IC process technology,
the following features are made possible in a single device:
Major ratings and characteristics
Values
Characteristics
I
F(AV)
Rectangular Waveform
V
RRM
V
F
@
5A, Tj=125℃
Tj
(operating/storage)
10
150
0.69
-65 to 150
Units
A
V
V, typ
Device optimized for ultra-low forward
voltage drop to maximize efficiency in
Power Supply applications
ELECTRICAL:
*
Ultra-Low Forward Voltage Drop
*
Reliable High Temperature Operation
*
Super Barrier Design
*
Softest, fast switching capability
* 150
O
C
Operating Junction Temperature
MECHANICAL:
*
Molded Plastic TO-220AB, TO-262, TO-263, and
ITO-220 packages
Case Styles
SBR10150CT
SBR10150CTF
SBR10150CTI
SBR10150CTB
2
1
Anode
Common
Cathode
Anode
3
Anode
1
Common
Cathode
2
Anode
3
Anode
1
Common
Cathode
2
2
Anode
3
Anode
1
Common
Cathode
Anode
3
TO-220AB
ITO-220
TO-262
TO-263
________________________________________________________________________________________________
Version 1.0 - August 2006
www.apdsemi.com
1

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SBR10150CTF SBR10150CT SBR10150CTB SBR10150CTI
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