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SBTJ7S

Description
Small-Signal Schottky Barrier Diodes
File Size43KB,3 Pages
ManufacturerETC1
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SBTJ7S Overview

Small-Signal Schottky Barrier Diodes

Silicon-Based Technology Corp.
Small-Signal Schottky Barrier Diodes
SBT107WS Series
SBT107WS series are Schottky Barrier Diodes fabricated by a series of
proprietary Schottky barrier patents and technologies (SBT
®
) developed by
Silicon-Based
Technology
Corporation,
which
exhibit
high-performance
characteristics for modern switching, conversion and protection applications with
high speed and low power consumptions. The package types as described in this
data sheet are set forth in routine production; other packages are available upon
special orders.
Features and Advantages:
Low forward voltage drop(V
F
)
Low reverse leakage current (I
R
)
Very small conduction power loss
Very small switching power loss
Very high switching speed
Very high reliability
Electrical Characteristics :
(@T
A
=25°C unless otherwise specified)
Characteristic
Reverse Breakdown Voltage
(Note 2)
Symbol Min. Typ. Max. Unit
V
(BR)R
30
-
280
-
-
-
500
600
1.0
-
A
pF
mV
V
Test Conditions
I
R
=100 A
@I
F
=2.0mA
@I
F
=15mA
@ I
F
=50mA
@I
F
=100mA
V
R
=25V
V
R
=0V, f=1.0MH
Z
Forward Voltage (Note 2)
V
FM
-
320
450
550
-
7
Reverse Current (Note 2)
Total Capacitance
I
RM
C
T
-
-
SBT
Silicon-Based Technology Corporation
Tel 886-3-5777897
Fax 886-3-5779832
1F,No.23, R&D Rd.I, Hsinchu Science Park, Taiwan, R.O.C

SBTJ7S Related Products

SBTJ7S SBT107WS
Description Small-Signal Schottky Barrier Diodes Small-Signal Schottky Barrier Diodes

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