SD853C..S50K Series
Vishay High Power Products
Fast Recovery Diodes
(Hockey PUK Version), 990 A
FEATURES
• High power FAST recovery diode series
• 5.0 µs recovery time
• High voltage ratings up to 4500 V
• High current capability
• Optimized turn-on and turn-off characteristics
DO-200AC (K-PUK)
RoHS
COMPLIANT
• Low forward recovery
• Fast and soft reverse recovery
• Press PUK encapsulation
• Case style conform to JEDEC DO-200AC (K-PUK)
• Maximum junction temperature 125 °C
• Lead (Pb)-free
PRODUCT SUMMARY
I
F(AV)
990 A
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
TEST CONDITIONS
VALUES
990
T
hs
55
1800
I
F(RMS)
T
hs
50 Hz
I
FSM
60 Hz
50 Hz
60 Hz
V
RRM
t
rr
T
J
Range
25
19 000
A
19 900
1810
1652
3000 to 4500
5.0
T
J
25
°C
- 40 to 125
V
µs
kA
2
s
UNITS
A
°C
A
°C
I
2
t
Document Number: 93182
Revision: 14-May-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
SD853C..S50K Series
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
30
SD853C..S50K
36
40
45
V
RRM
, MAXIMUM REPETITIVE PEAK
REVERSE VOLTAGE
V
3000
3600
4000
4500
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
3100
3700
4100
4600
100
I
RRM
MAXIMUM
AT T
J
= 125 °C
mA
Fast Recovery Diodes
(Hockey PUK Version), 990 A
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at heatsink temperature
Maximum RMS forward current
SYMBOL
I
F(AV)
I
F(RMS)
TEST CONDITIONS
180° conduction, half sine wave
Double side (single side) cooled
25 °C heatsink temperature double side cooled
t = 10 ms
Maximum peak, one-cycle forward,
non-repetitive surge current
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
√t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
I
2
√t
V
F(TO)1
V
F(TO)2
r
f1
r
f2
V
FM
No voltage
reapplied
50 % V
RRM
reapplied
No voltage
reapplied
50 % V
RRM
reapplied
VALUES
990 (420)
55 (85)
1800
19 000
19 900
16 000
Sinusoidal half wave,
initial T
J
= T
J
maximum
16 750
1805
1645
1280
1165
18 050
1.50
1.67
0.70
mΩ
(I >
π
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 2000 A, T
J
= 125 °C;
t
p
= 10 ms sinusoidal wave
0.65
2.90
V
kA
2
√s
V
kA
2
s
A
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
maximum
(I >
π
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
maximum
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT T
J
= 25 °C
CODE
t
rr
AT 25 % I
RRM
(µs)
5.0
TEST CONDITIONS
I
pk
SQUARE
PULSE
(A)
1000
TYPICAL VALUES
AT T
J
= 125 °C
V
r
(V)
- 50
t
rr
AT 25 % I
RRM
(µs)
6.5
Q
rr
(µC)
1000
I
rr
(A)
270
I
FM
t
rr
t
Q
rr
I
RM(REC)
dI/dt
(A/µs)
100
dir
dt
S50
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93182
Revision: 14-May-08
SD853C..S50K Series
Fast Recovery Diodes
Vishay High Power Products
(Hockey PUK Version), 990 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
SYMBOL
T
J
T
Stg
DC operation single side cooled
R
thJ-hs
DC operation double side cooled
TEST CONDITIONS
VALUES
- 40 to 125
°C
- 40 to 150
0.04
K/W
0.02
22 250 (2250)
425
N (kg)
g
UNITS
DO-200AC (K-PUK)
ΔR
thJ-hs
CONDUCTION
SINUSOIDAL CONDUCTION
CONDUCTION ANGLE
SINGLE SIDE
180°
120°
90°
60°
30°
0.0017
0.0021
0.0026
0.039
0.0067
DOUBLE SIDE
0.0019
0.0021
0.0027
0.0039
0.0067
SINGLE SIDE
0.0012
0.0021
0.0029
0.0041
0.0068
DOUBLE SIDE
0.0012
0.0021
0.0029
0.0041
0.0068
T
J
= T
J
maximum
K/W
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
Document Number: 93182
Revision: 14-May-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
SD853C..S50K Series
Vishay High Power Products
Maximum Allowable Heatsink T
emperature (°C)
Fast Recovery Diodes
(Hockey PUK Version), 990 A
Maximum Allowable Heats T
ink emperature (°C)
130
120
110
100
90
80
70
60
50
40
30
20
10
0
400
800
1200
1600
2000
Average Forward Current (A)
30°
60°
90°
120°
180°
DC
Conduction Period
130
120
110
100
90
80
70
60
S
D853C..S
50K S
eries
(S
ingle S
ide Cooled)
R
thJ-hs
(DC) = 0.04 K/ W
S
D853C..S
50K S
eries
(Double S
ide Cooled)
R
thJ-hs
(DC) = 0.02 K/ W
Conduction Angle
30°
50
40
0
60° 90°
180°
120°
100 200 300 400 500 600 700 800
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Maximum Average Forward Power Loss (W)
Maximum Allowable Heatsink T
emperature (°C)
130
120
110
100
90
80
70
60
50
40
30
20
0
200
400
600
800
1000 1200
Average Forward Current (A)
30°
60°
90°
120°
180°
DC
Conduction Period
4000
3500
3000
2500
2000
1500
Conduction Angle
S
D853C..S
50K S
eries
(S
ingle S
ide Cooled)
R
thJ-hs
(DC) = 0.04 K/ W
180°
120°
90°
60°
30°
R Limit
MS
1000
500
0
0
200
400
600
800
1000 1200
Average Forward Current (A)
S
D853C..S
50K S
eries
T = 125°C
J
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics
Maximum Allowable Heatsink T
emperature (°C)
120
110
100
90
80
70
60
50
40
30
0
200
S
D853C..S
50K S
eries
(Double S
ide Cooled)
R
thJ-hs
(DC) = 0.02 K/ W
Maximum Average Forward Power Loss (W)
130
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
0
0
400
800
1200
1600
2000
Average Forward Current (A)
Conduction Period
Conduction Angle
DC
180°
120°
90°
60°
30°
RMSLimit
30°
60°
90°
120°
180°
S
D853C..S
50K S
eries
T = 125°C
J
400
600
800
1000 1200
Average Forward Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 6 - Forward Power Loss Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93182
Revision: 14-May-08
SD853C..S50K Series
Fast Recovery Diodes
Vishay High Power Products
(Hockey PUK Version), 990 A
Peak Half S Wave Forward Current (A)
ine
18000
10000
Instantaneous F
orward Current (A)
T = 25°C
J
T = 125°C
J
At Any Rated Load Condition And With
50% Rated V
RRM
Applied Following S
urge
16000
Initial T = 125 °C
J
@60 Hz 0.0083 s
14000
@50 Hz 0.0100 s
12000
10000
8000
6000
4000
1
10
100
Number Of Equa l Amplitude Half Cyc le Current Pulses (N)
1000
S
D853C..S
50K S
eries
S
D853C..S
50K S
eries
100
1
2
3
4
5
6
7
8
9
Instantaneous Forward Voltage (V)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - Forward Voltage Drop Characteristics
Peak Half S Wave F
ine
orward Current (A)
18000
16000
14000
12000
10000
8000
6000
T
ransient T
hermal Impedance Z
Maximum Non Repetitive S
urge Current
Versus Pulse T
rain Duration.
Initial T = 125°C
J
No Voltage Reapplied
50% Rated V
RRM
Reapplied
(K/ W)
20000
0.1
S
D853C..S
50K S
eries
thJ-hs
0.01
S
teady S
tate Value
0.001
R
thJ-hs
= 0.04 K/ W
(S
ingle S
ide Cooled)
R
thJ-hs
= 0.02 K/ W
(Double S
ide Cooled)
(DC Operation)
0.0001
0.001
0.01
0.1
1
10
100
S
D853C..S
50K S
eries
0.1
Pulse T
rain Duration (s)
1
4000
0.01
S
quare Wave Pulse Duration (s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
300
250
F
orward R overy (V)
ec
200
150
100
50
0
0
200
400
600
800
1000
1200
1400
1600
1800
2000
Rate Of Rise Of F
orward Current - di/ dt (A/ us)
V
FP
I
T = 125°C
J
T = 25°C
J
S
D853C..S
50K S
eries
Fig. 11 - Typical Forward Recovery Characteristics
Document Number: 93182
Revision: 14-May-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
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