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SDR626CTJ

Description
40 A, 400 V, SILICON, RECTIFIER DIODE, TO-257
CategoryDiscrete semiconductor    diode   
File Size76KB,2 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
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SDR626CTJ Overview

40 A, 400 V, SILICON, RECTIFIER DIODE, TO-257

SDR626CTJ Parametric

Parameter NameAttribute value
MakerSSDI
package instructionR-XSFM-P3
Reach Compliance Codecompli
ECCN codeEAR99
applicationHYPER FAST RECOVERY
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.7 V
JEDEC-95 codeTO-257
JESD-30 codeR-XSFM-P3
Maximum non-repetitive peak forward current150 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature200 °C
Minimum operating temperature-65 °C
Maximum output current20 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage600 V
Maximum reverse current50 µA
Maximum reverse recovery time0.035 µs
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR623CTJ, CAJ, DJ, DRJ
thru
SDR626CTJ, CAJ, DJ, DRJ
40 AMPS
300 - 600 VOLTS
35 nsec
HYPER FAST
CENTERTAP RECTIFIER
FEATURES:
Hyper Fast Recovery: 35 nsec Maximum
3/
High Surge Rating
Low Reverse Leakage Current
Low Junction Capacitance
Isolated Hermetically Sealed Package
Gold Eutectic Die Attach Available
Ultrasonic Aluminum Wire Bonds
Custom Lead Forming Available
TX, TXV, and Space Level Screening Available
Consult Factory.
2/
Designer’s Data Sheet
Part Number/Ordering Information
1/
SDR62
__ _
J
_ __ __
│ └
Screening
2/
__
= Not Screened
│ │ │
│ │ │
TX = TX Level
│ │
|
TXV = TXV Level
S = S Level
│ │ │
│ │ │
Leg
Bend
│ │ │
__ = Straight
│ │ │
(See Figure 1)
DB = Down Bend
UB = Up Bend
│ │ │
│ │ └
Package
J = TO-257
│ │
│ │
Pin Configuration
CT: common cathode
│ └
CA: common anode
D: doubler
DR: doubler reverse
Voltage
3
= 300V,
4
= 400V,
5
= 500V,
6
= 600V
Available in Following Configurations:
Common Cathode Centertap:
SDR623CTJ, SDR623CTJUB, SDR623CTJDB; SDR624CTJ, SDR624CTJUB,
SDR624CTJDB; SDR625CTJ, SDR625CTJUB, SDR625CTJDB; SDR626CTJ, SDR626CTJUB,SDR626CTJDB
Common Anode Centertap:
SDR623CAJ, SDR623CAJUB, SDR623CAJDB; SDR624CAJ, SDR624CAJUB,
SDR624CAJDB; SDR625CAJ, SDR625CAJUB, SDR625CAJDB; SDR626CAJ, SDR626CAJUB, SDR626CAJDB
Doubler:
SDR623DJ, SDR623DJUB, SDR623DJDB; SDR624DJ, SDR624DJUB, SDR624DJDB; SDR625DJ,
SDR625DJUB, SDR625DJDB; SDR626DJ, SDR626DJUB,SDR626DJDB; SDR623DRJ, SDR623DRJUB,
SDR623DRJDB; SDR624DRJ, SDR624DRJUB, SDR624DRJDB; SDR625DRJ, SDR625DRJUB, SDR625DRJDB;
SDR626DRJ, SDR626DRJUB,SDR626DRJDB
TO-257
MAXIMUM RATINGS
Peak Repetitive Reverse Voltage and
DC Blocking Voltage
SDR623CTJ
SDR624CTJ
SDR625CTJ
SDR626CTJ
Symbol
V
RRM
V
RWM
V
R
I
O
I
FSM
Value
300
400
500
600
40
6/
150
Units
Volts
Amps
Amps
o
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave, T
A
=25
o
C)
4/
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, T
A
=25
o
C)
5/
Operating and Storage Temperature
Maximum Thermal Resistance
Junction to Case
4/
Junction to Case
5/
T
OP
& T
STG
-65 to +200
R
JC
1.2
2.0
o
C
C/W
NOTES:
1/ For ordering information, price, operating curves, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Recovery conditions: I
F
= 0.5 Amp, I
R
= 1.0 Amp, rec. to 0.25 Amp.
4/ Both legs tied together.
5/ Per leg.
6/ Doublers: I
O
= 20A/leg.
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0051G
DOC

SDR626CTJ Related Products

SDR626CTJ SDR624CTJ SDR625CTJ
Description 40 A, 400 V, SILICON, RECTIFIER DIODE, TO-257 40 A, 400 V, SILICON, RECTIFIER DIODE, TO-257 40 A, 500 V, SILICON, RECTIFIER DIODE, TO-257
Maker SSDI SSDI SSDI
Reach Compliance Code compli compli compli
ECCN code EAR99 EAR99 EAR99
application HYPER FAST RECOVERY HYPER FAST RECOVERY HYPER FAST RECOVERY
Shell connection ISOLATED ISOLATED ISOLATED
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.7 V 1.7 V 1.7 V
JEDEC-95 code TO-257 TO-257 TO-257
JESD-30 code R-XSFM-P3 R-MSFM-P3 R-MSFM-P3
Maximum non-repetitive peak forward current 150 A 250 A 250 A
Number of components 2 2 2
Phase 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 200 °C 200 °C 200 °C
Maximum output current 20 A 40 A 40 A
Package body material UNSPECIFIED METAL METAL
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Maximum repetitive peak reverse voltage 600 V 400 V 500 V
Maximum reverse recovery time 0.035 µs 0.035 µs 0.035 µs
surface mount NO NO NO
Terminal form PIN/PEG PIN/PEG PIN/PEG
Terminal location SINGLE SINGLE SINGLE
package instruction R-XSFM-P3 - R-MSFM-P3
Certification status - Not Qualified Not Qualified
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