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SDR954Z

Description
50 A, 400 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size128KB,2 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
Download Datasheet Parametric Compare View All

SDR954Z Overview

50 A, 400 V, SILICON, RECTIFIER DIODE

SDR954Z Parametric

Parameter NameAttribute value
Parts packaging codeTO-254Z
package instructionS-MSFM-P3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
applicationHYPER FAST RECOVERY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.65 V
JESD-30 codeS-MSFM-P3
Maximum non-repetitive peak forward current450 A
Number of components1
Phase1
Number of terminals3
Maximum operating temperature200 °C
Maximum output current50 A
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage400 V
Maximum reverse recovery time0.035 µs
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Base Number Matches1
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR953M & Z
Thru
SDR956M & Z
50A, 35nsec, 300-600 V
Hyper Fast Rectifier
Features
:
Part Number/Ordering Information
1/
SDR95
__ __ __ __
Designer’s Data Sheet
│ │ │
Screening
2/
__
= Not Screened
│ │ │
TX = TX Level
│ │ │
TXV = TXV Level
│ │ │
S = S Level
│ │ │
│ │
Lead Bend Option
(See Figure 1)
│ │
Package
M = TO-254, Z = TO-254Z
Voltage
3 = 300V, 4 = 400V,
5 = 500V, 6 = 600V.
Hyper Fast Recovery: 35nsec Maximum
3/
High Surge Rating
Low Reverse Leakage Current
Low Junction Capacitance
Hermetically Sealed Low Profile Package
Gold Eutectic Die Attach Available
Ultrasonic Aluminum Wire Bonds
Higher Voltages and Faster Recovery Times
Available, Contact Factory
Ceramic Seal for Improved Hermeticity Available
TX, TXV, and S-Level Screening Available
2/
Maximum Ratings
Peak Repetitive Reverse Voltage
And DC Blocking Voltage
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, T
A
= 25 °C)
Peak Surge Current
5/
(8.3 ms Pulse, Half Sine Wave, or equivalent DC)
Operating & Storage Temperature
Maximum Total Thermal Resistance
Junction to Case
4/
Symbol
SDR953M & Z
SDR954M & Z
SDR955M & Z
SDR956M & Z
V
RRM
V
RWM
V
R
Io
I
FSM
T
OP
& T
STG
R
θJC
Value
300
400
500
600
50
450
-65 to +200
1.2
Units
Volts
Amps
Amps
ºC
ºC/W
Notes:
1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request.
3/ Recovery Conditions: I
F
=.5 Amp, I
R
= 1A, I
RR
= .25A.
4/ Pins 2 and 3 Tied Together.
5/ Available with higher surge ratings.
TO-254 (M)
TO-254Z (Z)
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0029G
DOC

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Description 50 A, 400 V, SILICON, RECTIFIER DIODE Rectifier Diode, 1 Phase, 1 Element, 50A, 300V V(RRM), Silicon, TO-254Z, 3 PIN 50 A, 500 V, SILICON, RECTIFIER DIODE 50 A, 400 V, SILICON, RECTIFIER DIODE
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