SFH618A/628A
Phototransistor, 5.3 kV TRIOS
Low Current Input
Optocoupler
FEATURES
• Very High CTR at
I
F
=1.0 mA,
V
CE
=0.5 V
– SFH618A-2, 63–125%
– SFH618A-3, 100–200%
– SFH618A-4, 160–320%
– SFH618A-5, 250–500%
– SFH628A-2, 63–200%
– SFH628A-3, 100–320%
– SFH628A-4, 160–500%
• Specified Minimum CTR at
I
F
=0.5 mA
– SFH618A,
V
CE
=1.5 V:
≥
32% (typical 120%)
– SFH628A,
V
CE
=1.5 V:
≥
50% (typical 160%)
• Good CTR Linearity Depending on
Forward Current
• Low CTR Degradation
• High Collector-emitter Voltage,
V
CEO
=55 V
• Isolation Test Voltage, 5300 V
RMS
• Low Coupling Capacitance
• Field-Effect Stable by TRIOS (TRansparent IOn
Shield)
• End-Stackable, 0.100" (2.54 mm) Spacing
• High Common-mode Interference Immunity
(Unconnected Base)
• Underwriters Lab File #52744
•
V
VDE 0884 Available with Option 1
• SMD Option — See SFH6186/6286 Data Sheet
D E
Dimensions in Inches (mm)
2
1
pin one ID
.255 (6.48)
.268 (6.81)
Anode
1
Cathode
2
SFH628A
Anode/
Cathode
1
SFH618A
4
Collector
3
Emitter
4
Collector
3
Emitter
3
4
Cathode/
Anode
2
.179 (4.55)
.190 (4.83)
.030 (.76)
.045 (1.14)
.031 (.79) typ.
.050 (1.27) typ.
.130 (3.30)
.150 (3.81)
4°
typ.
.018 (.46)
.022 (.56)
.300 (7.62) typ.
10°
.020 (.508 )
.035 (.89)
.050 (1.27)
0.100 (2.54)
3°–9°
.008 (.20)
.012 (.30)
.230 (5.84)
.250 (6.35)
.110 (2.79)
.130 (3.30)
APPLICATIONS
• Telecom
• Industrial Controls
• Battery Powered Equipment
• Office Machines
DESCRIPTION
The SFH618A/628A feature a high current transfer
ratio, low coupling capacitance and high isolation
voltage. These couplers have a GaAs infrared emit-
ting diode emitter, which is optically coupled to a sili-
con planar phototransistor detector, and is
incorporated in a plastic DIP-4 package.
The coupling devices are designed for signal trans-
mission between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm lead
spacing.
Creepage and clearance distances of >8.0 mm are
achieved with option 6. This version complies with
IEC 950 (DIN VDE 0805) for reinforced insulation up
to an operation voltage of 400 V
RMS
or DC.
Maximum Ratings
Emitter
Reverse Voltage (SFH618A)............................................................. 6.0 V
DC Forward Current (SFH628A) .................................................. ±50 mA
Surge Forward Current (t
p
≤
10 µs) (SFH628A) ............................... ±2.5 A
Total Power Dissipation ................................................................. 70 mW
Detector
Collector-emitter Voltage ................................................................... 55 V
Emitter-collector Voltage................................................................... 7.0 V
Collector Current ............................................................................ 50 mA
Collector Current (t
p
≤
1.0 ms) ....................................................... 100 mA
Total Power Dissipation ............................................................... 150 mW
Package
Isolation Test Voltage between Emitter and
Detector, refer to Climate DIN 40046,
part 2, Nov. 74 ..................................................................... 5300 V
RMS
Creepage Distance ....................................................................
≥
7.0 mm
Clearance ...................................................................................
≥
7.0 mm
Insulation Thickness between Emitter and Detector ..................
≥
0.4 mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1 ..................................................175
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C.................................................................
≥
10
12
Ω
V
IO
=500 V,
T
A
=100
°
C...............................................................
≥
10
11
Ω
Storage Temperature Range ............................................. –55 to +150
°
C
Ambient Temperature Range............................................. –55 to +100
°
C
Junction Temperature ......................................................................100
°
C
Soldering Temperature (max. 10 s. Dip Soldering
Distance to Seating Plane
≥
1.5 mm) ..........................................260
°
C
www.vishay.com
2–242
Document Number: 83673
Revision 17-August-01
Embedded System
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