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SI3467DV_08

Description
P-Channel 20-V (D-S) MOSFET
File Size90KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet View All

SI3467DV_08 Overview

P-Channel 20-V (D-S) MOSFET

Si3467DV
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 20
R
DS(on)
(Ω)
0.054 at V
GS
= - 10 V
0.094 at V
GS
= - 4.5 V
I
D
(A)
- 5.0
- 3.8
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch
- PC
- Game Machine
TSOP-6
Top View
1
6
(4) S
3 mm
2
5
3
4
(3) G
2.85 mm
Ordering Information:
Si3467DV-T1-E3 (Lead (Pb)-free)
Si3467DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
Marking Code:
7Cxxx
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
- 1.7
2.0
1.3
- 55 to 150
- 5.0
- 3.9
- 25
- 0.95
1.14
0.73
W
°C
5s
Steady State
- 20
± 20
- 3.8
- 3.0
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Note:
a. Surface Mounted on 1" x 1" FR4 board.
t
5s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
50
90
30
Maximum
62.5
110
36
°C/W
Unit
Document Number: 72658
S09-0765-Rev. C, 04-May-09
www.vishay.com
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