SPICE Device Model Si5941DU
Vishay Siliconix
Dual P-Channel 8-V (D-S) MOSFET
CHARACTERISTICS
•
P-Channel Vertical DMOS
•
Macro Model (Subcircuit Model)
•
Level 3 MOS
•
Apply for both Linear and Switching Application
•
Accurate over the
−55
to 125°C Temperature Range
•
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the p-channel vertical DMOS. The subcircuit
model is extracted and optimized over the
−55
to 125°C
temperature ranges under the pulsed 0-V to 5-V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched C
gd
model. All model parameter values are optimized
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 74132
S-52019⎯Rev. A, 03-Oct-05
www.vishay.com
1
SPICE Device Model Si5941DU
Vishay Siliconix
SPECIFICATIONS (T
J
= 25°C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
On-State Drain Current
a
V
GS(th)
I
D(on)
V
DS
= V
GS
, I
D
=
−250μA
V
DS
≤ −5V,
V
GS
=
−4.5V
V
GS
=
−4.5V,
I
D
=
−3.6
A
Drain-Source On-State Resistance
a
Symbol
Test Condition
Simulated
Data
Measured
Data
Unit
0.80
54
0.058
0.083
0.114
9
−0.80
0.055
0.086
0.125
8
−0.80
V
A
r
DS(on)
V
GS
=
−2.5V,
I
D
=
−2.9 Α
V
GS
=
−1.8V,
I
D
=
−0.66 Α
Ω
Forward Transconductance
Diode Forward Voltage
a
a
g
fs
V
SD
V
DS
=
−4V,
I
D
=
−3.6
A
I
S
=
−1A,
V
GS
= 0 V
S
V
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
V
DS
=
−4
V, V
GS
=
−8
V, I
D
=
−5
A
V
DS
=
−4
V, V
GS
=
−4.5
V, I
D
=
−5
A
V
DS
=
−4
V, V
GS
= 0 V, f = 1 MHz
589
103
57
9.5
5.7
1.3
1.5
700
325
220
11
6.5
1.3
1.5
nC
pF
Notes
a. Pulse test; pulse width
≤
300
μs,
duty cycle
≤
2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
2
Document Number: 74132
S-52019⎯Rev. A, 03-Oct-05
SPICE Device Model Si5941DU
Vishay Siliconix
COMPARISON OF MODEL WITH MEASURED DATA (T
J
=25°C UNLESS OTHERWISE NOTED)
Document Number: 74132
S-52019⎯Rev. A, 03-Oct-05
www.vishay.com
3
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