Si6552DQ
Vishay Siliconix
Dual N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
N-Channel
20
r
DS(on)
(W)
0.08 @ V
GS
= 4.5 V
0.11 @ V
GS
= 2.5 V
0.1 @ V
GS
= - 4.5 V
I
D
(A)
"2.8
"2.1
"2.5
"1.9
P-Channel
P Channel
- 12
0.18 @ V
GS
= - 2.5 V
D
1
S
2
TSSOP-8
D
1
S
1
S
1
G
1
1
2
3
4
Top View
S
1
N-Channel MOSFET
D
2
P-Channel MOSFET
D
8 D
2
7 S
2
6 S
2
5 G
2
G
2
G
1
Si6552DQ
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
P
D
T
J
, T
stg
T
A
= 25_C
T
A
= 70_C
I
D
I
DM
I
S
1.0
1.0
0.64
- 55 to 150
W
_C
Symbol
V
DS
V
GS
N-Channel
20
"8
"2.8
"2.3
"20
P-Channel
- 12
Unit
V
"2.5
"2.0
A
- 1.0
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
Document Number: 70175
S-03419—Rev. G, 03-Mar-03
www.vishay.com
Symbol
R
thJA
N- or P-Channel
125
Unit
_C/W
2-1
Si6552DQ
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= V
GS
, I
D
= - 250
mA
V
DS
= 0 V, V
GS
=
"8
V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= - 12 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V, T
J
= 70_C
V
DS
= - 12 V, V
GS
= 0 V, T
J
= 70_C
V
DS
= 5 V, V
GS
= 4.5 V
On-State
On State Drain Current
a
V
DS
= - 5 V, V
GS
= - 4.5 V
I
D( )
D(on)
V
DS
= 5 V, V
GS
= 2.5 V
V
DS
= - 5 V, V
GS
= - 2.5 V
V
GS
= 4.5 V, I
D
= 2.8 A
Drain-Source On-State
Drain Source On State Resistance
a
V
GS
= - 4.5 V, I
D
= 2.5 A
r
DS( )
DS(on)
V
GS
= 2.5 V, I
D
= 2.1 A
V
GS
= - 2.5 V, I
D
= 1.9 A
Forward Transconductance
a
V
DS
= 15 V, I
D
= 2.8 A
g
f
fs
V
DS
= - 9 V, I
D
= - 2.5 A
I
S
= 1.0 A, V
GS
= 0 V
V
SD
I
S
= - 1.0 A, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
12
7
1.2
- 1.2
V
S
10
- 10
4
-4
0.08
0.1
0.11
0.18
W
A
N-Ch
P-Ch
0.6
V
- 0.6
"100
1
-1
5
-5
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Diode Forward Voltage
a
Dynamic
b
N-Ch
Total Gate Charge
Q
g
N-Channel
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 2.8 A
Gate-Source
Gate Source Charge
Q
gs
P-Channel
V
DS
= - 6 V V
GS
= - 4.5 V I
D
= - 2.5 A
V,
4 5 V,
25
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
Turn-On
Turn On Delay Time
t
d( )
d(on)
N-Channel
V
DD
= 10 V, R
L
= 10
W
I
D
^
1 A, V
GEN
= 4.5 V, R
G
= 6
W
P Channel
P-Channel
V
DD
= - 6 V, R
L
= 6
W
V
I
D
^
- 1 A, V
GEN
= - 4.5 V, R
G
= 6
W
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
Fall Time
Source-Drain
Reverse Recovery Time
t
f
N-Channel—I
F
= 1.0 A, di/dt = 100 A/ms
t
rr
P-Channel—I
F
= - 1.0 A, di/dt = 100 A/ms
P-Ch
N-Ch
P-Ch
16
9
3
nC
2
6
3
37
21
66
35
56
43
57
22
26
35
60
40
100
70
100
80
100
40
70
70
ns
40
20
Gate-Drain
Gate Drain Charge
Q
gd
d
Rise Time
t
r
Turn-Off
Turn Off Delay Time
t
d( ff)
d(off)
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
2-2
Document Number: 70175
S-03419—Rev. G, 03-Mar-03
Si6552DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
V
GS
= 8 thru 3 V
16
I
D
- Drain Current (A)
I
D
- Drain Current (A)
16
25_C
12
20
T
C
= - 55_C
125_C
N−CHANNEL
Transfer Characteristics
12
2V
8
8
4
1V
0
0
2
4
6
8
10
4
0
0
1
2
3
4
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.20
1500
Capacitance
r
DS(on)
- On-Resistance (
Ω
)
1200
C - Capacitance (pF)
0.15
900
0.10
V
GS
= 2.5 V
600
C
iss
0.05
V
GS
= 4.5 V
300
C
rss
0.00
0
2
4
6
8
10
0
0
2
4
6
8
C
oss
10
12
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
5
V
DS
= 10 V
I
D
= 2.8 A
V
GS
- Gate-to-Source Voltage (V)
r
DS(on)
- On-Resistance (
Ω
)
(Normalized)
4
1.6
2.0
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
DS
= 2.8 A
3
1.2
2
0.8
1
0.4
0
0
4
8
12
16
20
0.0
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (_C)
Document Number: 70175
S-03419—Rev. G, 03-Mar-03
www.vishay.com
2-3
Si6552DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
30
20
0.090
I
S
- Source Current (A)
T
J
= 150_C
10
r
DS(on)
- On-Resistance (
Ω
)
0.100
N−CHANNEL
On-Resistance vs. Gate-to-Source Voltage
0.080
0.070
T
J
= 25_C
0.060
I
D
= 2.8 A
0.050
1
0.00
0.25
0.50
0.75
1.00
1.25
1.50
0.040
0
2
4
6
8
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage
1.0
25
Single Pulse Power
20
0.5
V
GS(th)
Variance (V)
15
0.0
I
D
= 250
µA
Power (W)
10
- 0.5
5
- 1.0
- 50
0
- 25
0
25
50
75
100
125
150
0.001
0.01
0.1
Time (sec)
1
10
30
T
J
- Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
0.05
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
0.02
Single Pulse
0.01
10
-4
2. Per Unit Base = R
thJA
= 125_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
-3
10
-2
10
-1
1
10
30
Square Wave Pulse Duration (sec)
www.vishay.com
2-4
Document Number: 70175
S-03419—Rev. G, 03-Mar-03
Si6552DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
V
GS
= 8, 7, 6, 5, 4 V
16
I
D
- Drain Current (A)
8
I
D
- Drain Current (A)
10
P−CHANNEL
Transfer Characteristics
3V
12
6
8
2V
4
4
2
T
C
= 125_C
25_C
- 55_C
0
0
2
4
6
8
10
0
0
1
2
3
4
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.25
1500
Capacitance
r
DS(on)
- On-Resistance (
Ω
)
0.20
C - Capacitance (pF)
1200
0.15
V
GS
= 2.5 V
0.10
V
GS
= 4.5 V
900
C
iss
600
C
oss
300
C
rss
0.05
0.00
0
2
4
6
8
10
0
0
2
4
6
8
10
12
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
8
V
GS
= 4.5 V
I
D
= 2.5 A
V
GS
- Gate-to-Source Voltage (V)
6
r
DS(on)
- On-Resistance (
Ω
)
(Normalized)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
- 50
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 2.5 A
4
2
0
0
3
6
9
12
15
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (_C)
Document Number: 70175
S-03419—Rev. G, 03-Mar-03
www.vishay.com
2-5
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