Specification Comparison
Vishay Siliconix
Si7868ADP vs. Si7868DP
Description:
Package:
Pin Out:
N-Channel, 20-V (D-S) MOSFET
PowerPAK® SO-8
Identical
Part Number Replacements:
Si7868ADP-T1-E3 Replaces Si7868DP-T1-E3
Si7868ADP-T1-E3 Replaces Si7868DP-T1
Summary of Performance:
The Si7868ADP is the replacement to the original Si7868DP; both parts perform identically, including limits to the parametric
tables below.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
o
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Si7868ADP
Si7868DP
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current
(MOSFET Diode Conduction)
Avalanche Current
Power Dissipation
T
A
= 25°C
T
A
= 70°C
V
DS
V
GS
I
D
I
DM
I
S
L = 0.1 mH
T
A
= 25°C
I
AS
P
D
T
j
& T
stg
R
thJA
20
+16
35
28
70
4.9
30
5.4
3.4
-55 to 150
23
20
+16
29
25
60
4.5
50
5.4
3.4
-55 to 150
23
W
°C
°C/W
A
V
T
A
= 70°C
Operating Junction & Storage Temperature Range
Maximum Junction-to-Ambient
SPECIFICATIONS (T
J
= 25
O
C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 4.5 V
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
Qg
Qgs
Qgd
Rg
t
d(on)
t
r
t
d(off)
t
f
t
rr
30
0.0018
0.0021
150
0.65
46
9.5
8.8
1.1
28
120
52
12
50
1.1
70
0.00225
0.00275
0.6
1.6
+100
1
30
0.0018
0.0022
95
0.63
50
12
11
1.2
53
49
150
75
65
1.1
75
nC
1.8
80
75
240
110
100
ns
Ω
0.00225
0.00275
0.6
1.5
+100
1
V
nA
µA
A
Ω
S
V
Symbol
Min
Si7868ADP
Typ
Max
Min
Si7868DP
Typ
Max
Unit
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
0.5
1.7
45
180
80
20
75
0.5
Switching
Turn-On Time*
Turn-Off Time*
Source-Drain Reverse Recovery Time
* Datasheet test conditions differ;
R
L
= 1
Ω
, I
D
= 10 A, Rg = 1
Ω
on the Si7868ADP and
R
L
= 10
Ω
, I
D
= 1 A, Rg = 6
Ω
on the Si7868DP.
Document Number 74054
15-Apr-05
www.vishay.com
Microcontroller MCU
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