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RN2307

Description
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
CategoryDiscrete semiconductor    The transistor   
File Size168KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric View All

RN2307 Overview

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN2307 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeSC-70
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)80
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.1 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
RN2307~RN2309
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2307,RN2308,RN2309
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l
With built-in bias resistors
l
Simplify circuit design
l
Reduce a quantity of parts and manufacturing process
l
Complementary to RN1307~RN1309
Unit: mm
Equivalent Circuit
Bias Resistor Values
Type No.
RN2307
RN2308
RN2309
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
JEDEC
EIAJ
TOSHIBA
Weight: 0.006g
SC-70
2-2E1A
Maximum Ratings
(Ta
=
25°C)
°
Characteristic
Collector-base voltage
Collector-emitter voltage
RN2307
Emitter-base voltage
RN2308
RN2309
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
I
C
P
C
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
−50
−50
−6
−7
−15
−100
100
150
−55~150
mA
mW
°C
°C
V
Unit
V
V
1
2001-06-07
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