SIHFD420-E3 datasheet, PDF - EEWORLD Datasheet

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SIHFD420-E3: Description0.37 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET; CategoryDiscrete semiconductor The transistor; File Size1MB，9 Pages; ManufacturerVishay; Websitehttp://www.vishay.com; Environmental Compliance

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SIHFD420-E3 Overview

0.37 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET

SIHFD420-E3 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Vishay
Parts packaging code	DIP
package instruction	IN-LINE, R-PDIP-T3
Contacts	4
Reach Compliance Code	unknow
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	51 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (Abs) (ID)	0.37 A
Maximum drain current (ID)	0.37 A
Maximum drain-source on-resistance	3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDIP-T3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	1 W
Maximum pulsed drain current (IDM)	3 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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IRFD420, SiHFD420

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

(V)

DS(on)

()

(Max.) (nC)

(nC)

Configuration

= 10 V

3.3

Single

FEATURES

• Dynamic dV/dt Rating

500

3.0

• Repetitive Avalanche Rated

• For Automatic Insertion

• End Stackable

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

Available

RoHS*

COMPLIANT

HVMDIP

DESCRIPTION

N-Channel MOSFET

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The 4 pin DIP package is a low cost machine-insertable

case style which can be stacked in multiple combinations on

standard 0.1 inch pin centers. The dual drain serves as a

thermal link to the mounting surface for power dissipation

levels up to 1 W.

ORDERING INFORMATION

Package

Lead (Pb)-free

SnPb

HVMDIP

IRFD420PbF

SiHFD420-E3

IRFD420

SiHFD420

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

Single Pulse Avalanche

Repetitive Avalanche

Energy

= 25 °C

dV/dt

, T

stg

for 10 s

Repetitive Avalanche Current

Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V

= 50 V, starting T

= 25 °C, L = 40 mH, R

= 25

,

= 1.5 A.

c. I



4.4 A, dI/dt



90 A/μs, V



, T



150 °C.

d. 1.6 mm from case.

at 10 V

= 25 °C

= 100 °C

SYMBOL

LIMIT

500

± 20

0.37

0.23

3.0

0.0083

0.37

0.10

1.0

3.5

- 55 to + 150

300

W/°C

V/ns

°C

UNIT

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91135

S10-2463-Rev. C, 08-Nov-10

www.vishay.com

SIHFD420-E3 Related Products

	SIHFD420-E3	SIHFD420
Description	0.37 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET	0.37 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET
Is it lead-free?	Lead free	Contains lead
Is it Rohs certified?	conform to	incompatible
Maker	Vishay	Vishay
Parts packaging code	DIP	DIP
package instruction	IN-LINE, R-PDIP-T3	IN-LINE, R-PDIP-T3
Contacts	4	4
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	51 mJ	51 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V	500 V
Maximum drain current (Abs) (ID)	0.37 A	0.37 A
Maximum drain current (ID)	0.37 A	0.37 A
Maximum drain-source on-resistance	3 Ω	3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDIP-T3	R-PDIP-T3
JESD-609 code	e3	e0
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	1 W	1 W
Maximum pulsed drain current (IDM)	3 A	3 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Matte Tin (Sn)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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