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SIHFI634G

Description
Power MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size1MB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

SIHFI634G Overview

Power MOSFET

SIHFI634G Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerVishay
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresFAST SWITCHING
Avalanche Energy Efficiency Rating (Eas)300 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage250 V
Maximum drain current (Abs) (ID)5.6 A
Maximum drain current (ID)5.6 A
Maximum drain-source on-resistance0.45 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)35 W
Maximum pulsed drain current (IDM)22 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
IRFI634G, SiHFI634G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
41
6.5
22
Single
D
FEATURES
250
0.45
• Isolated Package
• High Voltage Isolation = 2.5 kV
RMS
(t = 60 s;
f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
TO-220 FULLPAK
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
G
S
G D S
N-Channel
MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220 FULLPAK
IRFI634GPbF
SiHFI634G-E3
IRFI634G
SiHFI634G
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
Notes
a.
b.
c.
d.
Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
V
DD
= 50 V, starting T
J
= 25 °C, L = 15 mH, R
G
= 25
Ω,
I
AS
= 5.6 A (see fig. 12).
I
SD
5.6 A, dI/dt
120 A/µs, V
DD
V
DS
, T
J
150 °C.
1.6 mm from case.
Current
a
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
LIMIT
250
± 20
5.6
3.5
22
0.28
300
5.6
3.5
35
4.8
- 55 to + 150
300
d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
T
C
= 25 °C
for 10 s
6-32 or M3 screw
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91149
S09-0013-Rev. A, 19-Jan-09
www.vishay.com
1

SIHFI634G Related Products

SIHFI634G SIHFI634G-E3
Description Power MOSFET Power MOSFET
Is it lead-free? Contains lead Lead free
Is it Rohs certified? incompatible conform to
Maker Vishay Vishay
Parts packaging code TO-220AB TO-220AB
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Other features FAST SWITCHING FAST SWITCHING
Avalanche Energy Efficiency Rating (Eas) 300 mJ 300 mJ
Shell connection ISOLATED ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 250 V 250 V
Maximum drain current (Abs) (ID) 5.6 A 5.6 A
Maximum drain current (ID) 5.6 A 5.6 A
Maximum drain-source on-resistance 0.45 Ω 0.45 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e0 e3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 35 W 35 W
Maximum pulsed drain current (IDM) 22 A 22 A
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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