EEWORLDEEWORLDEEWORLD

Part Number

Search

SIHFP260-E3

Description
POWER, FET
CategoryDiscrete semiconductor    The transistor   
File Size2MB,9 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric Compare View All

SIHFP260-E3 Overview

POWER, FET

SIHFP260-E3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeTO-247
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)1000 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (Abs) (ID)46 A
Maximum drain current (ID)46 A
Maximum drain-source on-resistance0.055 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-247
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)280 W
Maximum pulsed drain current (IDM)180 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
IRFP260, SiHFP260
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
230
42
110
Single
D
FEATURES
200
0.055
Dynamic dV/dt Rating
Repetitive Avalanche Rated
Isolated Central Mounting Hole
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
TO-247AC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The
TO-247AC
package
is
preferred
for
commercial-industrial applications where higher power
levels preclude the use of TO-220AB devices. The
TO-247AC is similar but superior to the earlier TO-218
package because of its isolated mouting hole. It also
provides greater creepage distance between pins to meet
the requirements of most safety specifications.
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-247AC
IRFP260PbF
SiHFP260-E3
IRFP260
SiHFP260
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Current
a
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
T
C
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
6-32 or M3 screw
LIMIT
200
± 20
46
29
180
2.2
1000
46
28
280
5.0
- 55 to + 150
300
d
10
1.1
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
A
UNIT
V
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 708 μH, R
g
= 25
Ω,
I
AS
= 46 A (see fig. 12).
c. I
SD
46 A, dI/dt
230 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91215
S11-0487-Rev. B, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

SIHFP260-E3 Related Products

SIHFP260-E3 SIHFP260
Description POWER, FET POWER, FET
Is it lead-free? Lead free Contains lead
Is it Rohs certified? conform to incompatible
Maker Vishay Vishay
Parts packaging code TO-247 TO-247
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Other features AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas) 1000 mJ 1000 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 200 V 200 V
Maximum drain current (Abs) (ID) 46 A 46 A
Maximum drain current (ID) 46 A 46 A
Maximum drain-source on-resistance 0.055 Ω 0.055 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-247 TO-247
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e0
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 280 W 280 W
Maximum pulsed drain current (IDM) 180 A 180 A
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Matte Tin (Sn) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
[MSP430 Sharing] PCB Design Skills for MSP430 Mixed-Analog and Digital Applications
The PCB design techniques for MSP430 mixed-signal applications are divided into three sections: [1] Functions and usage of several pins related to ADC12 [2] PCB layout and power supply circuit topolog...
hangsky Microcontroller MCU
What is the meaning behind *(volatile unsigned short *)0x20000000?
Seen from the 8*8LED dot matrix light program....
jsglf Embedded System
Voltage sampling circuit in TMDSHV1PHINVKIT high voltage single-phase inverter development kit
Why after the circuit is inverted, the AC voltage sampling (LINE_VP) and (LINE_VN) are only connected to the differential amplifier circuit by limiting the current through three 1M circuits to LINE.V+...
eaglesky Microcontroller MCU
Ask for help with getting started with the iq_math library
[i=s] This post was last edited by dontium on 2015-1-23 11:22 [/i]Iwas confused when I first read it.Usingti 's example, it runsnormally. I commented out all the programs in main() and turnedit intoth...
langniao Analogue and Mixed Signal
lmsp430x14x --- led display program
#include#include "led.h"unsigned char seg[]={0x3f,0x06,0x5b,0x4f, /* 0 1 2 3*/0x66,0x6d,0x7d,0x07, /* 4 5 6 7 */0x7f,0x6f,0x77,0x7c, /* 8 9 AB */0x39,0x5e,0x79,0x71 /* CDEF */};void Init_Port(void){//...
wide Microcontroller MCU
What are the differences between wire-wound common mode inductors and chip-wound inductors?
Do you know how many types of winding inductors there are? Today we will talk about the difference between SMD winding inductors and winding common-mode inductors in winding inductors.What is the diff...
szgjdz Energy Infrastructure?

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 356  336  2041  2385  40  8  7  42  49  1 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号