RN2709 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> RN2709

RN2709: DescriptionSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications; CategoryDiscrete semiconductor The transistor; File Size175KB，6 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/; Environmental Compliance

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RN2709 Overview

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN2709 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	conform to
Maker	Toshiba Semiconductor
package instruction	2-2L1A, 5 PIN
Contacts	5
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	BUILT-IN RESISTOR RATIO IS 0.47
Maximum collector current (IC)	0.1 A
Collector-based maximum capacity	6 pF
Collector-emitter maximum voltage	50 V
Configuration	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	70
JESD-30 code	R-PDSO-G5
Number of components	2
Number of terminals	5
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.2 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
VCEsat-Max	0.3 V

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RN2707~RN2709

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2707,RN2708,RN2709

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

Including two devices in USV (ultra super mini type with 5 leads)

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN1707~RN1709

Unit: mm

Equivalent Circuit and Bias Resistor Values

Type No.

RN2707

RN2708

RN2709

R1 (kΩ)

R2 (kΩ)

JEDEC

EIAJ

TOSHIBA

Weight: 6.2mg

―

2-2L1A

Equivalent Circuit

(Top View)

Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Characteristic

Collector-base voltage

Collector-emitter voltage

RN2707~2709

RN2707

Emitter-base voltage

RN2708

RN2709

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN2707~2709

stg

EBO

Symbol

CBO

CEO

Rating

−50

−6

−7

−15

−100

200

150

−55~150

°C

Unit

* :

Total rating

2001-06-07

RN2709 Related Products

	RN2709	RN2707	RN2708
Description	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
Is it lead-free?	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	conform to	incompatible	conform to
Maker	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor
package instruction	2-2L1A, 5 PIN	2-2L1A, 5 PIN	2-2L1A, 5 PIN
Contacts	5	5	5
Reach Compliance Code	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99
Other features	BUILT-IN RESISTOR RATIO IS 0.47	BUILT-IN RESISTOR RATIO IS 4.7	BUILT-IN RESISTOR RATIO IS 2.14
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A
Collector-based maximum capacity	6 pF	6 pF	6 pF
Collector-emitter maximum voltage	50 V	50 V	50 V
Configuration	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	70	80	80
JESD-30 code	R-PDSO-G5	R-PDSO-G5	R-PDSO-G5
Number of components	2	2	2
Number of terminals	5	5	5
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	240	NOT SPECIFIED
Polarity/channel type	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.2 W	0.2 W	0.2 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz
VCEsat-Max	0.3 V	0.3 V	0.3 V

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