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SIHFZ48S

Description
50 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
CategoryDiscrete semiconductor    The transistor   
File Size400KB,10 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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SIHFZ48S Overview

50 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

SIHFZ48S Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerVishay
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)100 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)50 A
Maximum drain current (ID)50 A
Maximum drain-source on-resistance0.018 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)190 W
Maximum pulsed drain current (IDM)290 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
110
29
36
Single
D
FEATURES
60
0.018
Advanced process technology
Surface mount (IRFZ48S, SiHFZ48S)
Low-profile through-hole (IRFZ48L, SiHFZ48L)
175 °C operating temperature
Fast switching
Material categorization: for definitions of
compliance
please
see
www.vishay.com/doc?99912
Available
Available
I
2
PAK
(TO-262)
D
2
PAK (TO-263)
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
G
G
G
D
S
D
S
S
N-Channel MOSFET
DESCRIPTION
Third generation power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D
2
PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
2
PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2 W in a typical surface mount application.
The through-hole version (IRFZ48L, SiHFZ48L) is available
for low-profile applications.
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D
2
PAK (TO-263)
SiHFZ48S-GE3
IRFZ48SPbF
I
2
PAK (TO-262)
SiHFZ48L-GE3
-
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
f
Pulsed Drain
Linear Derating Factor
Single Pulse Avalanche Energy
b, e
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c, e
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature)
d
T
C
= 25 °C
T
A
= 25 °C
Current
a, e
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
P
D
dV/dt
T
J
, T
stg
for 10 s
LIMIT
60
± 20
50
50
290
1.3
100
190
3.7
4.5
-55 to +175
300
UNIT
V
A
W/°C
mJ
W
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, Starting T
J
= 25 °C, L = 22 μH, R
g
= 25
,
I
AS
= 72 A (see fig. 12).
c. I
SD
72 A, dI/dt
200 A/μs, V
DD
V
DS
, T
J
175 °C.
d. 1.6 mm from case.
e. Uses IRFZ48, SiHFZ48 data and test conditions.
f. Calculated continuous current based on maximum allowable junction temperature.
S15-1659-Rev. D, 20-Jul-15
Document Number: 90377
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

SIHFZ48S Related Products

SIHFZ48S SIHFZ48STL IRFZ48L IRFZ48LPBF IRFZ48STRR
Description 50 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 50 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 50 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 50 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB MOSFET N-CH 60V 50A D2PAK
Is it lead-free? Contains lead Contains lead Contains lead Lead free Contains lead
Is it Rohs certified? incompatible incompatible incompatible conform to incompatible
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 D2PAK-3
Contacts 4 4 3 3 3
Reach Compliance Code unknow unknow compli unknow unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 100 mJ 100 mJ 100 mJ 100 mJ 100 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V 60 V 60 V 60 V
Maximum drain current (Abs) (ID) 50 A 50 A 50 A 50 A 50 A
Maximum drain current (ID) 50 A 50 A 50 A 50 A 50 A
Maximum drain-source on-resistance 0.018 Ω 0.018 Ω 0.018 Ω 0.018 Ω 0.018 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSIP-T3 R-PSIP-T3 R-PSSO-G2
Number of components 1 1 1 1 1
Number of terminals 2 2 3 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE IN-LINE IN-LINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 240 240 225 260 225
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 190 W 190 W 190 W 190 W 190 W
Maximum pulsed drain current (IDM) 290 A 290 A 290 A 290 A 290 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES NO NO YES
Terminal form GULL WING GULL WING THROUGH-HOLE THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 30 30 NOT SPECIFIED 40 NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Maker Vishay - Vishay Vishay -
Parts packaging code D2PAK D2PAK TO-262AA TO-262AA -
JEDEC-95 code TO-263AB TO-263AB TO-262AA TO-262AA -
JESD-609 code e0 e0 - e3 -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Matte Tin (Sn) -
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