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SIHLU014

Description
POWER, FET
CategoryDiscrete semiconductor    The transistor   
File Size804KB,11 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

SIHLU014 Overview

POWER, FET

SIHLU014 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerVishay
Parts packaging codeTO-251
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)27.4 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)7.7 A
Maximum drain current (ID)7.7 A
Maximum drain-source on-resistance0.2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-251
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)25 W
Maximum pulsed drain current (IDM)31 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
IRLR014, IRLU014, SiHLR014, SiHLU014
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 5.0 V
8.4
3.5
6.0
Single
D
FEATURES
60
0.20
DPAK
(TO-252)
D
D
IPAK
(TO-251)
G
Dynamic dV/dt Rating
Surface Mount (IRLR014, SiHLR014)
Straight Lead (IRLU014, SiHLU014)
Available in Tape and Reel
Logic-Level Gate Drive
R
DS(on)
Specified at V
GS
= 4 V and 5 V
Fast Switching
Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRLU, SiHLU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
G
S
G
D S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
DPAK (TO-252)
SiHLR014-GE3
IRLR014PbF
SiHLR014-E3
DPAK (TO-252)
-
IRLR014TRPbF
a
SiHLR014T-E3
a
DPAK (TO-252)
SiHLR014TRL-GE3
IRLR014TRLPbF
a
SiHLR014TL-E3
a
IPAK (TO-251)
SiHLU014-GE3
IRLU014PbF
SiHLU014-E3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Linear Derating Factor (PCB
Maximum Power Dissipation
Maximum Power Dissipation (PCB
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak
Temperature)
d
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 924 μH, R
g
= 25
,
I
AS
= 7.7 A (see fig. 12).
c. I
SD
10 A, dI/dt
90 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
Mount)
e
Mount)
e
E
AS
T
C
= 25 °C
T
A
= 25 °C
P
D
dV/dt
T
J
, T
stg
Single Pulse Avalanche Energy
b
V
GS
at 5.0 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
60
± 10
7.7
4.9
31
0.20
0.020
27.4
25
2.5
4.5
- 55 to + 150
260
W/°C
mJ
W
V/ns
°C
A
UNIT
V
S13-0164-Rev. D, 04-Feb-13
Document Number: 91321
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

SIHLU014 Related Products

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Description POWER, FET POWER, FET POWER, FET POWER, FET POWER, FET POWER, FET POWER, FET POWER, FET POWER, FET POWER, FET
Is it lead-free? Contains lead Lead free Lead free Lead free Contains lead Lead free Lead free Lead free Lead free -
Is it Rohs certified? incompatible conform to conform to conform to incompatible conform to conform to conform to conform to -
Maker Vishay Vishay Vishay Vishay Vishay Vishay Vishay Vishay Vishay -
Parts packaging code TO-251 TO-252 TO-252 TO-251 TO-252 TO-252 TO-252 TO-252 TO-251 -
package instruction IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 -
Contacts 3 3 3 3 3 3 3 3 3 -
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow unknow unknow -
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 -
Other features LOGIC LEVEL COMPATIBLE - - - LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE -
Avalanche Energy Efficiency Rating (Eas) 27.4 mJ 27.4 mJ 27.4 mJ 27.4 mJ 27.4 mJ 27.4 mJ 27.4 mJ 27.4 mJ 27.4 mJ -
Shell connection DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN -
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE -
Minimum drain-source breakdown voltage 60 V 60 V 60 V 60 V 60 V 60 V 60 V 60 V 60 V -
Maximum drain current (Abs) (ID) 7.7 A 7.7 A 7.7 A 7.7 A 7.7 A 7.7 A 7.7 A 7.7 A 7.7 A -
Maximum drain current (ID) 7.7 A 7.7 A 7.7 A 7.7 A 7.7 A 7.7 A 7.7 A 7.7 A 7.7 A -
Maximum drain-source on-resistance 0.2 Ω 0.2 Ω 0.2 Ω 0.2 Ω 0.2 Ω 0.2 Ω 0.2 Ω 0.2 Ω 0.2 Ω -
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
JEDEC-95 code TO-251 TO-252 TO-252 TO-251 TO-252 TO-252 TO-252 TO-252 TO-251 -
JESD-30 code R-PSIP-T3 R-PSSO-G2 R-PSSO-G2 R-PSIP-T3 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSIP-T3 -
JESD-609 code e0 e3 e3 e3 e0 e3 e3 e3 e3 -
Number of components 1 1 1 1 1 1 1 1 1 -
Number of terminals 3 2 2 3 2 2 2 2 3 -
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE -
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
Package form IN-LINE SMALL OUTLINE SMALL OUTLINE IN-LINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE IN-LINE -
Peak Reflow Temperature (Celsius) 240 260 260 260 240 260 260 260 260 -
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL -
Maximum power dissipation(Abs) 25 W 25 W 25 W 25 W 25 W 25 W 25 W 25 W 25 W -
Maximum pulsed drain current (IDM) 31 A 31 A 31 A 31 A 31 A 31 A 31 A 31 A 31 A -
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified -
surface mount NO YES YES NO YES YES YES YES NO -
Terminal surface Tin/Lead (Sn/Pb) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Tin/Lead (Sn/Pb) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) -
Terminal form THROUGH-HOLE GULL WING GULL WING THROUGH-HOLE GULL WING GULL WING GULL WING GULL WING THROUGH-HOLE -
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE -
Maximum time at peak reflow temperature 30 40 40 40 30 40 40 40 40 -
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING -
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON -
Humidity sensitivity level - 1 1 - - 1 1 1 1 -
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