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SMBJ75A

Description
600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
CategoryDiscrete semiconductor    diode   
File Size92KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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SMBJ75A Overview

600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA

SMBJ75A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
Reach Compliance Codeunknow
Breakdown voltage nominal value87.7 V
Maximum clamping voltage121 V
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-609 codee0
polarityUNIDIRECTIONAL
Maximum repetitive peak reverse voltage75 V
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
SMBJ5.0A thru SMBJ188A
www.vishay.com
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Available in uni-directional and bi-directional
600 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty
cycle): 0.01 %
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DO-214AA (SMB J-Bend)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
V
WM
P
PPM
I
FSM
(uni-directional only)
T
J
max.
5.0 V to 188 V
600 W
100 A
150 °C
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g. SMBJ10CA).
Electrical characteristics apply in both directions.
Case:
DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
For uni-directional types the band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform
(1)(2)
(fig. 1)
Peak pulse current with a 10/1000 μs waveform
(1)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2.
A
(2)
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
(2)
SYMBOL
P
PPM
I
PPM
I
FSM
T
J
, T
STG
VALUE
600
See next table
100
- 55 to + 150
UNIT
W
A
A
°C
Revision: 26-Jul-12
Document Number: 88392
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

SMBJ75A Related Products

SMBJ75A SMBJ22A SMBJ17A-TR
Description 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Diode type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
polarity UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL
surface mount YES YES Yes
Is it Rohs certified? incompatible incompatible -
Maker Vishay Vishay -
Reach Compliance Code unknow unknow -
Breakdown voltage nominal value 87.7 V 25.65 V -
Maximum clamping voltage 121 V 35.5 V -
JESD-609 code e0 e0 -
Maximum repetitive peak reverse voltage 75 V 22 V -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
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