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LP1026H

Description
Variable Capacitance Diode, Ultra High Frequency, 12pF C(T), 25V, Silicon, Abrupt
CategoryDiscrete semiconductor    diode   
File Size121KB,2 Pages
ManufacturerMsi Electronics Inc
Download Datasheet Parametric View All

LP1026H Overview

Variable Capacitance Diode, Ultra High Frequency, 12pF C(T), 25V, Silicon, Abrupt

LP1026H Parametric

Parameter NameAttribute value
package instructionO-MUPM-N1
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW INDUCTANCE
Minimum breakdown voltage25 V
Shell connectionCATHODE
ConfigurationSINGLE
Minimum diode capacitance ratio4.5
Nominal diode capacitance12 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandULTRA HIGH FREQUENCY
JESD-30 codeO-MUPM-N1
Number of components1
Number of terminals1
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Maximum power dissipation5 W
Certification statusNot Qualified
minimum quality factor700
Maximum repetitive peak reverse voltage25 V
Maximum reverse current0.02 µA
Reverse test voltage20 V
surface mountNO
Terminal formNO LEAD
Terminal locationUPPER
Varactor Diode ClassificationABRUPT
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