2N950 datasheet, PDF - EEWORLD Datasheet

2N950: DescriptionSilicon Controlled Rectifier, 0.26A I(T)RMS, 260mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-18; CategoryAnalog mixed-signal IC Trigger device; File Size225KB，4 Pages; ManufacturerSemitronics Corp.

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2N950 Overview

Silicon Controlled Rectifier, 0.26A I(T)RMS, 260mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-18

Parameter Name	Attribute value
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE
Maximum DC gate trigger current	0.02 mA
Maximum DC gate trigger voltage	1 V
Maximum holding current	1 mA
JEDEC-95 code	TO-18
JESD-30 code	O-MBCY-W3
Maximum leakage current	0.02 mA
On-state non-repetitive peak current	1 A
Number of components	1
Number of terminals	3
Maximum on-state current	260 A
Maximum operating temperature	150 °C
Minimum operating temperature	-60 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Certification status	Not Qualified
Maximum rms on-state current	0.26 A
Off-state repetitive peak voltage	100 V
Repeated peak reverse voltage	100 V
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Trigger device type	SCR
Base Number Matches	1

Shortcut: S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY

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