IS61VF409618B-7.5B2LI datasheet, PDF

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IS61VF409618B-7.5B2LI: DescriptionCache SRAM, 4MX18, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 1 MM PITCH, LEAD FREE, PLASTIC, MS-028, BGA-119; Categorystorage storage; File Size1MB，34 Pages; ManufacturerISSI(Integrated Silicon Solution Inc.); Websitehttp://www.issi.com/; Environmental Compliance

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IS61VF409618B-7.5B2LI Overview

Cache SRAM, 4MX18, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 1 MM PITCH, LEAD FREE, PLASTIC, MS-028, BGA-119

IS61VF409618B-7.5B2LI Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	BGA
package instruction	BGA, BGA119,7X17,50
Contacts	119
Reach Compliance Code	compliant
ECCN code	3A991.B.2.A
Maximum access time	7.5 ns
Maximum clock frequency (fCLK)	117 MHz
I/O type	COMMON
JESD-30 code	R-PBGA-B119
length	22 mm
memory density	75497472 bit
Memory IC Type	CACHE SRAM
memory width	18
Number of functions	1
Number of terminals	119
word count	4194304 words
character code	4000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	4MX18
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Encapsulate equivalent code	BGA119,7X17,50
Package shape	RECTANGULAR
Package form	GRID ARRAY
Parallel/Serial	PARALLEL
power supply	2.5 V
Certification status	Not Qualified
Maximum seat height	3.5 mm
Minimum standby current	2.38 V
Maximum supply voltage (Vsup)	2.625 V
Minimum supply voltage (Vsup)	2.375 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	1.27 mm
Terminal location	BOTTOM
width	14 mm

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IS61LF204836B, IS61VF/VVF204836B

IS61LF409618B, IS61VF/VVF409618B

2M x 36, 4M x 18

72 Mb SYNCHRONOUS

FLOW-THROUGH

STATIC RAM

FEATURES

• Internal self-timed write cycle

• Individual Byte Write Control and Global Write

• Clock controlled, registered address, data and

control

• Burst sequence control using MODE input

• Three chip enable option for simple depth expan-

sion and address pipelining

• Common data inputs and data outputs

• Auto Power-down during deselect

• Single cycle deselect

• Snooze MODE for reduced-power standby

• JTAG Boundary Scan for PBGA package

• Power Supply

LF: V

3.3V (+ 5%),

ddq

3.3V/2.5V (+ 5%)

VF: V

2.5V (+ 5%),

ddq

2.5V (+ 5%)

VVF: V

1.8V (+ 5%),

ddq

1.8V (+ 5%)

• JEDEC 100-Pin TQFP, 119-pin PBGA, and 165-

pin PBGA packages

• Lead-free available

ADVANCED INFORMATION

OCTOBER 2012

DESCRIPTION

The 72Mb product family features high-speed, low-power

synchronous static

RAMs

designed to provide burstable,

high-performance memory for communication and network-

ing applications. The

IS61LF/VF204836B is organized as

2,096,952 words by 36 bits. The IS61LF/VF409618B

organized as 4,193,904 words by 18 bits. Fabricated with

ISSI

's advanced CMOS technology, the device integrates

a 2-bit burst counter, high-speed SRAM core, and high-

drive capability outputs into a single monolithic circuit. All

synchronous inputs pass through registers controlled by

a positive-edge-triggered single clock input.

Write cycles are internally self-timed and are initiated by the

rising edge of the clock input. Write cycles can be one to

four bytes wide as controlled by the write control inputs.

Separate byte enables allow individual bytes to be writ-

ten. Byte write operation is performed by using byte write

enable (BWE)

input combined with one or more individual

byte write signals (BWx). In addition, Global Write (GW)

is available for writing all bytes at one time, regardless of

the byte write controls.

Bursts can be initiated with either

ADSP

(Address Status

Processor) or

ADSC

(Address Status Cache Controller)

input pins. Subsequent burst addresses can be gener-

ated internally and controlled by the

ADV

(burst address

advance) input pin.

The mode pin is used to select the burst sequence order,

Linear burst is achieved when this pin is tied LOW. Inter-

leave burst is achieved when this pin is tied HIGH or left

floating.

FAST ACCESS TIME

Symbol

Parameter

Clock Access Time

Cycle Time

Frequency

-6.5

6.5

7.5

133

-7.5

7.5

8.5

117

Units

MHz

liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on

any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause

failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written

assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

Rev. 00B

10/15/2012

IS61VF409618B-7.5B2LI Related Products

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Description	Cache SRAM, 4MX18, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 1 MM PITCH, LEAD FREE, PLASTIC, MS-028, BGA-119	Cache SRAM, 4MX18, 6.5ns, CMOS, PBGA119, 14 X 22 MM, 1 MM PITCH, PLASTIC, MS-028, BGA-119	Cache SRAM, 4MX18, 6.5ns, CMOS, PBGA119, 14 X 22 MM, 1 MM PITCH, LEAD FREE, PLASTIC, MS-028, BGA-119	Cache SRAM, 4MX18, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 1 MM PITCH, PLASTIC, MS-028, BGA-119	Cache SRAM, 4MX18, 6.5ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, LEAD FREE, PLASTIC, TFBGA-165	Cache SRAM, 4MX18, 6.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, LFBGA-165
Is it Rohs certified?	conform to	incompatible	conform to	incompatible	conform to	incompatible
Parts packaging code	BGA	BGA	BGA	BGA	BGA	BGA
package instruction	BGA, BGA119,7X17,50	BGA, BGA119,7X17,50	BGA, BGA119,7X17,50	BGA, BGA119,7X17,50	TBGA, BGA165,11X15,40	LBGA, BGA165,11X15,40
Contacts	119	119	119	119	165	165
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Maximum access time	7.5 ns	6.5 ns	6.5 ns	7.5 ns	6.5 ns	6.5 ns
Maximum clock frequency (fCLK)	117 MHz	133 MHz	133 MHz	117 MHz	133 MHz	133 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PBGA-B119	R-PBGA-B119	R-PBGA-B119	R-PBGA-B119	R-PBGA-B165	R-PBGA-B165
length	22 mm	22 mm	22 mm	22 mm	15 mm	17 mm
memory density	75497472 bit	75497472 bit	75497472 bit	75497472 bit	75497472 bit	75497472 bit
Memory IC Type	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM
memory width	18	18	18	18	18	18
Number of functions	1	1	1	1	1	1
Number of terminals	119	119	119	119	165	165
word count	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words
character code	4000000	4000000	4000000	4000000	4000000	4000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C	85 °C	70 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-
organize	4MX18	4MX18	4MX18	4MX18	4MX18	4MX18
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	BGA	BGA	BGA	BGA	TBGA	LBGA
Encapsulate equivalent code	BGA119,7X17,50	BGA119,7X17,50	BGA119,7X17,50	BGA119,7X17,50	BGA165,11X15,40	BGA165,11X15,40
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY, THIN PROFILE	GRID ARRAY, LOW PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	2.5 V	2.5 V	2.5 V	2.5 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	3.5 mm	3.5 mm	3.5 mm	3.5 mm	1.2 mm	1.4 mm
Minimum standby current	2.38 V	2.38 V	2.38 V	2.38 V	3.14 V	3.14 V
Maximum supply voltage (Vsup)	2.625 V	2.625 V	2.625 V	2.625 V	3.465 V	3.465 V
Minimum supply voltage (Vsup)	2.375 V	2.375 V	2.375 V	2.375 V	3.135 V	3.135 V
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL
Terminal form	BALL	BALL	BALL	BALL	BALL	BALL
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1 mm	1 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
width	14 mm	14 mm	14 mm	14 mm	13 mm	15 mm

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