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2N887

Description
Silicon Controlled Rectifier, 350mA I(T), 100V V(DRM),
CategoryAnalog mixed-signal IC    Trigger device   
File Size34KB,1 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

2N887 Overview

Silicon Controlled Rectifier, 350mA I(T), 100V V(DRM),

2N887 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeBCY
Contacts3
Reach Compliance Codecompli
Maximum DC gate trigger current0.02 mA
Maximum DC gate trigger voltage0.6 V
Maximum holding current1 mA
JESD-609 codee0
Maximum leakage current0.02 mA
On-state non-repetitive peak current20 A
Maximum on-state current350 A
Maximum operating temperature100 °C
Minimum operating temperature-60 °C
Off-state repetitive peak voltage100 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Trigger device typeSCR
Base Number Matches1

2N887 Related Products

2N887 2N886 2N885
Description Silicon Controlled Rectifier, 350mA I(T), 100V V(DRM), Silicon Controlled Rectifier, 350mA I(T), 60V V(DRM), Silicon Controlled Rectifier, 350mA I(T), 30V V(DRM),
Is it Rohs certified? incompatible incompatible incompatible
Parts packaging code BCY BCY BCY
Contacts 3 3 3
Reach Compliance Code compli compli compli
Maximum DC gate trigger current 0.02 mA 0.02 mA 0.02 mA
Maximum DC gate trigger voltage 0.6 V 0.6 V 0.6 V
Maximum holding current 1 mA 1 mA 1 mA
JESD-609 code e0 e0 e0
Maximum leakage current 0.02 mA 0.02 mA 0.02 mA
On-state non-repetitive peak current 20 A 20 A 20 A
Maximum on-state current 350 A 350 A 350 A
Maximum operating temperature 100 °C 100 °C 100 °C
Minimum operating temperature -60 °C -60 °C -60 °C
Off-state repetitive peak voltage 100 V 60 V 30 V
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Trigger device type SCR SCR SCR
Base Number Matches 1 1 1
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