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SPD3126UFSMSTX

Description
0.7 A, 2500 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size159KB,2 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
Download Datasheet Parametric View All

SPD3126UFSMSTX Overview

0.7 A, 2500 V, SILICON, SIGNAL DIODE

SPD3126UFSMSTX Parametric

Parameter NameAttribute value
MakerSSDI
package instructionHERMETIC SEALED PACKAGE-2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-XELF-R2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current0.7 A
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
GuidelineMIL-19500
Maximum repetitive peak reverse voltage2500 V
Maximum reverse recovery time0.07 µs
surface mountYES
Terminal formWRAP AROUND
Terminal locationEND
SPD3126 Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information
1/
SPD3126
__ __ __
2/
Screening
__
= Not Screened
TX = TX Level
TXV = TXV
S = S Level
HIGH VOLTAGE
1.0 AMP
2.5 kV MIN
Standard/ Fast / UltraFast Recovery
Rectifier
FEATURES:
PIV 2.5 kV MIN
Hermetically Sealed
Single Chip Construction
For High Voltage Applications
Available in Axial & Square Tab Versions
TX, TXV, and S-Level Screening Available
2/
Replacement for High Voltage Multijunction
Devices
Package Type
__
= Axial Leaded
SMS = Surface Mount Square Tab
Recovery Time
4/
___ = Standard Recovery ( 5000 ns)
F = Fast ( 250 nS)
UF = Ultrafast ( 70 ns )
MAXIMUM RATINGS
3/
RATING
Peak Repetitive Reverse Voltage
And
DC Blocking Voltage
Average Rectified Forward Current
(L = 1/8”, Resistive Load, 60Hz, Sine Wave, T
A
= 25°C)
SYMBOL
SPD3126
Recovery Time
Std Fast UF
2500
2500
2500
UNIT
Volts
Amps
Amps
°C
°C/W
SMS
V
RRM
V
R
I
O
I
FSM
T
J
and T
STG
R
θJL
R
θJE
1.0
40
0.8
28
-65 to +175
38
25
0.7
20
Peak Surge Current
(8.3ms pulse, half sine wave superimposed on Io, allow
junction to reach equilibrium between pulses, T
A
= 25°C)
Operating & Storage Temperature
Junction to Lead for Axial, L =.375"
Thermal Resistance
Junction to End Tab for Surface Mount
NOTES:
Axial Leaded
1/
For Ordering Information, Price, Operating Curves, and Availability- Contact Factory.
2/
Screening Based on MIL-PRF-19500. Screening Flows Available on Request.
3/
Unless Otherwise Specified, All Electrical Characteristics @25ºC.
4/
I
F
= 500mA, I
R
= 1A, I
RR
= 250mA,
T
A
= 25°C
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0110B
DOC

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