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SPD48SMTXV

Description
0.2 A, 50 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size63KB,2 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
Download Datasheet Parametric View All

SPD48SMTXV Overview

0.2 A, 50 V, SILICON, SIGNAL DIODE

SPD48SMTXV Parametric

Parameter NameAttribute value
MakerSSDI
package instructionO-LELF-R2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeO-LELF-R2
Maximum non-repetitive peak forward current4 A
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current0.2 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage50 V
Maximum reverse recovery time0.005 µs
surface mountYES
Terminal formWRAP AROUND
Terminal locationEND
PRELIMINARY
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SPD48SM &SMS
Thru
SPD51SM & SMS
200 mAMP
50-125 Volts
5 nsec
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SPD _ _ __ __
L
Screening
2/
= None
TX = TX Level
TXV = TXV Level
S = S Level
HYPER FAST RECTIFIER
Features:
Hyper Fast Recovery: 5 nsec maximum
Subminiature Surface Mount Package
Square Tab Mounting (Round Tabs Available)
Hermetically Sealed
Planar Passivated Chip
For High Efficiency Applications
Replaces 1N4148 – 1N4151 types
TX, TXV and S – Level Screening Available
2/
L
Package
SM = Surface Mount Round Tab
SMS = Surface Mount Square Tab
48 = 50 V
49 = 75 V
50 = 100 V
51 = 125 V
L
Voltage
Maximum Ratings
Peak Repetitive Reverse and
DC Blocking Voltage
SPD48SM & SMS
SPD49SM & SMS
SPD50SM & SMS
SPD51SM & SMS
Symbol
V
RRM
V
RWM
V
R
Io
Value
50
75
100
125
200
Units
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, T
A
= 25ºC)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to
Reach Equilibrium Between Pulses, T
A
= 25ºC)
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to End Tab
1/ For Ordering Information, Price, and Availability – Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request.
mAmps
I
FSM
4
Amps
Top & Tstg
R
θJE
-65 to +200
0.35
SM (Round)
ºC
ºC/mW
SMS (Square)
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0085D
DOC

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