Solid State Devices, Inc.
14701Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SPD5614 thru SPD5622
SPD5614SM thru SPD5622SM
SPD5614SMS thru SPD5622SMS
1 AMP
200
─
1000 VOLTS
STANDARD RECOVERY
RECTIFIER
FEATURES:
Fast Recovery: 5
μsec
Maximum
PIV 200 to 1000 Volts
Low Reverse Leakage Current
Hermetically Sealed
Single Chip Construction
High Surge Rating
Low Thermal Resistance
Replaces 1N5614 to 1N5622
TX, TXV, and Space Level Screening Available
2/
Designer’s Data Sheet
Part Number/Ordering Information
1/
SPD
___ ___
___
│
│
└
Screening
2/
__ = Not Screened
│
│
TX = TX Level
│
│
TXV = TXV
│
│
S = S Level
│
│
│
└
Package Type
__
= Axial Leaded
│
SM = Surface Mount Round Tab
│
SMS = Surface Mount Square Tab
│
└
Voltage/Family
5614 = 200V
5616 = 400V
5618 = 600V
5620 = 800V
5622 = 1000V
•
•
•
•
•
•
•
•
•
MAXIMUM RATINGS
Peak Repetitive Reverse Voltage and
DC Blocking Voltage
SPD5614
SPD5616
SPD5618
SPD5620
SPD5622
Symbol
V
RRM
V
RWM
V
R
I
O
I
FSM
T
J
& Tstg
R
θJL
R
θJE
Value
200
400
600
800
1000
1
30
-65 to +175
35
30
Units
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave, T
A
=25
o
C)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on I
O
,
allow junction to reach equilibrium between pulses, T
A
=25
o
C)
Operating and Storage Temperature
Thermal Resistance
Junction to Leads, L =
⅜″
Amps
Amps
o
o
C
C/W
Axial
Surface Mount Round Tab (SM)
Surface Mount Square Tab (SMS)
1/
For Ordering Information, Price, Operating Curves, and Availability- Contact Factory.
2/
Screening Based on MIL-PRF-19500. Screening Flows Available on Request.
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: R00011D
DOC
Solid State Devices, Inc.
14701Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SPD5614 thru SPD5622
SPD5614SM thru SPD5622SM
SPD5614SMS thru SPD5622SMS
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage Drop
(I
F
= 1 Amp, T
A
= 25
o
C, 300-500
μs
Pulse)
Instantaneous Forward Voltage Drop
(I
F
= 1 Amp, T
A
= -55
o
C, 300-500
μs
Pulse)
Reverse Leakage Current
(Rated V
R
, T
A
= 25
o
C, 300
μs
Pulse minimum)
Max Reverse Leakage Current
(Rated V
R
, T
A
= 100
o
C, 300
μs
Pulse minimum)
Max Junction Capacitance
(V
R
=10 V
DC
, T
A
= 25
o
C, f= 1 MHz)
Reverse Recovery Time
(I
F
=500 mA, I
R
=1 A, I
RR
=250 mA, T
A
= 25
o
C)
CASE OUTLINE: AXIAL
Symbol
V
F
V
F
I
R
I
R
C
J
t
rr
Value
1.0
1.2
2
200
20
5
Unit
Volts
Volts
μA
μA
pF
μsec
DIMENSIONS
DIM
MIN
MAX
---
.150"
A
---
.180"
B
.027"
.033"
C
1.00"
---
D
CASE OUTLINE: (SMS) SURFACE MOUNT SQUARE TAB
CASE OUTLINE: (SM) SURFACE MOUNT ROUND TAB
DIMENSIONS
DIM
MIN
MAX
A
.095”
.105”
.185”
.205”
B
.010”
.022”
C
DIMENSIONS
DIM
MIN
MAX
.125”
.135”
A
.205”
.255”
B
.022”
.028”
C
.002”
---
D
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: R00011D
DOC
Microcontroller MCU
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