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SPD6630

Description
2.8 A, 900 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size136KB,2 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
Download Datasheet Parametric View All

SPD6630 Overview

2.8 A, 900 V, SILICON, RECTIFIER DIODE

SPD6630 Parametric

Parameter NameAttribute value
MakerSSDI
package instructionE-XALF-W2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.8 V
JESD-30 codeE-XALF-W2
Maximum non-repetitive peak forward current75 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current2.8 A
Package body materialUNSPECIFIED
Package shapeELLIPTICAL
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage900 V
Maximum reverse recovery time0.05 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
SPD6626 thru SPD6631
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SPD6626SMS thru SPD6631SMS
2.8 - 4 AMPS,
200 - 1000 VOLTS
30 - 60 nsec
HYPER FAST RECOVERY
RECTIFIER
Designer’s Data Sheet
Part Number/Ordering Information
1/
SPD
__ __ __
Screening
2/
__
= Not Screened
TX = TX Level
TXV = TXV
S = S Level
Package Type
__
= Axial Leaded
B = Axial w/ .040” lead diameter
SMS = Surface Mount Square Tab
Voltage/Family
6626 = 200V
6627 = 400V
6628 = 600V
6629 = 800V
6630 = 900V
6631 = 1000V
FEATURES:
Hyper Fast Recovery: 30 - 60 nsec maximum
Guaranteed High Temp. trr: 90 - 120 nsec maximum
PIV up to 1000 Volts
Low Reverse Leakage Current
Hermetically Sealed
Void Free Construction
For High Efficiency Applications
TX, TXV, and Space Level Screening Available
2/
Replacement for 1N6626 thru 1N6631
MAXIMUM RATINGS
SPD6626
SPD6627
SPD6628
SPD6629
SPD6630
SPD6631
SPD6626 - 6628
SPD6629 - 6631
SPD6626 - 6630
SPD6631
Symbol
V
RRM
V
RWM
V
R
Value
200
400
600
800
900
1000
4
2.8
Units
Peak Repetitive Reverse Voltage and
DC Blocking Voltage
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave)
T
A
≤55
o
C at .375”
Peak Surge Current
(Single 8.3 ms Pulse, Half Sine
Wave, Superimposed on I
O
,
T
A
≤55
o
C
)
Operating and Storage Temperature
Maximum Thermal Resistance
Junction to Lead, L = 0.375” (Axial Lead)
B Variant
Junction to End Tab (Surface Mount)
I
O
I
FSM
T
OP
& T
stg
R
θJL
R
θJL
R
θJE
Amps
Amps
o
75
60
-65 to +175
20
22
14
C
o
C/W
Axial Leaded (__)
Square Tab Surface Mount (SMS)
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0113D
DOC

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