SQ7415EN
Vishay Siliconix
Automotive
P-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω) at V
GS
= 10 V
I
D
(A)
Configuration
PowerPAK 1212-8
FEATURES
- 60
0.065
- 5.7
Single
S
• TrenchFET
®
Power MOSFET
• Package with Low Thermal Resistance
Pb-free
Available
AEC-Q101 RELIABILITY
• Passed all AEC-Q101 Reliability Testing
RoHS*
COMPLIANT
3.30 mm
S
1
2
3
S
S
3.30 mm
G
G
4
D
8
7
6
5
D
D
D
D
P-Channel MOSFET
Bottom View
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
PowerPAK 1212-8
SQ7415EN-T1-E3
SQ7415EN-T1
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Continuous Source Current (Diode Conduction)
a
Pulsed Drain Current
b
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
Maximum Power Dissipation
b
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
C
= 70 °C
SYMBOL
V
DS
V
GS
I
D
I
S
I
DM
E
AS
I
AS
P
D
T
J
, T
stg
LIMIT
- 60
± 20
- 3.6
a
- 2.9
a
- 1.3
a
- 30
-
-
1.5
0.8
- 55 to + 175
mJ
A
W
°C
A
UNIT
V
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
c. When mounted on 1" square PCB (FR-4 material).
PCB Mount
c
SYMBOL
R
thJA
R
thJC
LIMIT
81
2.4
UNIT
°C/W
Document Number: 74488
S-81558-Rev. B, 01-Jul-08
www.vishay.com
1
SQ7415EN
Vishay Siliconix
SPECIFICATIONS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State
Resistance
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
°C
b
-
I
F
= 85 A, V
GS
= 0 V
I
F
= - 3.2 A, dI/dt = 100 A/µs
-
-
-
-
-
-
45
-
-
-
-
90
-
-
A
V
ns
A
µC
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
V
DD
= - 30 V, R
L
= 30
Ω
I
D
≅
- 1 A, V
GEN
= - 10 V, R
g
= 6
Ω
V
GS
= - 10 V
V
DS
= - 30 V, I
D
= - 5.7 A
V
GS
= 0 V
V
DS
= 25 V, f = 1 MHz
V
GS
= 0 V, I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= - 10 V
V
GS
= - 10 V
V
GS
= - 10 V
V
GS
= - 10 V
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise
Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
a
Forward Voltage
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
-
-
-
-
-
-
-
-
-
-
-
-
-
15
4
3.2
12
12
22
16
-
-
-
25
-
-
20
20
35
25
ns
nC
pF
V
DS
= - 60 V
V
DS
= - 60 V, T
J
= 125 °C
V
DS
= - 60 V, T
J
= 175 °C
V
DS
≤
- 5 V
I
D
= - 5.7 A
I
D
= 30 A, T
J
= 125 °C
I
D
= 30 A, T
J
= 175 °C
-
- 1.5
-
-
-
-
- 20
-
-
-
11
-
-
-
-
-
-
-
0.054
-
-
-
-
- 3.0
± 100
- 1.0
- 5.0
-
-
0.065
-
-
-
S
Ω
A
µA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= - 15 V, I
D
= - 5.7 A
Source-Drain Diode Ratings and Characteristics
T
C
= 25
Notes
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 74488
S-81558-Rev. B, 01-Jul-08
SQ7415EN
Vishay Siliconix
TYPICAL CHARACTERISTICS
T
A
= 25 °C, unless otherwise noted
20
V
GS
= 10 thru 5 V
16
I
D
- Drain Current (A)
I
D
- Drain Current (A)
16
20
12
4V
8
12
8
T
C
= 125 °C
4
25 °C
0
4
3V
0
0
1
2
3
4
5
- 55 °C
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
300
0.20
Transfer Characteristics
250
g
fs
- Transcond
u
ctance (S)
R
DS(on)
- On-Resistance (Ω)
0.16
200
150
100
Graph to be available
upon completion
of testing
0.12
V
GS
= 4.5 V
0.08
V
GS
= 10 V
0.04
50
0
0
20
40
60
80
100
120
0.00
0
4
8
12
16
20
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Transconductance
1200
10
On-Resistance vs. Drain Current
V
GS
- Gate-to-Source Voltage (V)
1000
C - Capacitance (pF)
C
iss
8
V
DS
= 30 V
I
D
= 5.7 A
800
6
600
4
400
C
oss
C
rss
200
2
0
0
10
20
30
40
50
60
0
0
4
8
12
16
V
DS
- Drain-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
Capacitance
Document Number: 74488
S-81558-Rev. B, 01-Jul-08
Gate Charge
www.vishay.com
3
SQ7415EN
Vishay Siliconix
TYPICAL CHARACTERISTICS
T
A
= 25 °C, unless otherwise noted
1.8
V
GS
= 10 V
I
D
= 5.7 A
I
S
- Source Current (A)
20
T
J
= 150 °C
10
1.6
R
DS(on)
- On-Resistance
(Normalized)
1.4
1.2
1.0
T
J
= 25 °C
0.8
0.6
- 50
- 25
0
25
50
75
100
125
150
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
0.20
56
Source Drain Diode Forward Voltage
R
DS(on)
- On-Resistance (Ω)
0.16
I
D
= 5.7 A
0.12
52
48
0.08
Graph to be available
upon completion
of testing
V
DS
(V)
44
0.04
0.00
0
2
4
6
8
10
40
- 50
- 25
0
25
50
75
100
125
150
175
V
GS
- Gate-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown
vs. Junction Temperature
www.vishay.com
4
Document Number: 74488
S-81558-Rev. B, 01-Jul-08
SQ7415EN
Vishay Siliconix
THERMAL RATINGS
T
A
= 25 °C, unless otherwise noted
120
1000
100
I
D
- Drain C
u
rrent (A)
100
80
60
Graph to be available
upon completion
of testing
10
Graph to be available
upon completion
of testing
40
1
20
0
0
25
50
75
100
125
150
175
T
C
- Ambient Temperature (°C)
I
Da
v
(A)
0.1
0.00001
0.0001
0.001
T
AV
(s)
0.01
0.1
1
Maximum Drain Current vs. Ambient Temperature
50
0.8
Avalanche Current vs. Time
40
V
GS(th)
Variance (V)
0.6
I
D
= 250 µA
Power (W)
0.4
30
0.2
20
0.0
10
- 0.2
0
0.01
0.1
1
Time (s)
10
100
600
- 0.4
- 50
- 25
0
25
50
75
100
125
150
T
J
- Temperature (°C)
Single Pulse Power, Junction-to-Ambient
1000
Threshold Voltage
100
I
D
- Drain C
u
rrent (A)
10
Graph to be available
upon completion
of testing
1
0.1
0.1
*
V
GS
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area
Document Number: 74488
S-81558-Rev. B, 01-Jul-08
www.vishay.com
5
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