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SUD17N25-165

Description
N-Channel 250-V (D-S) 175 °C MOSFET
File Size90KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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SUD17N25-165 Overview

N-Channel 250-V (D-S) 175 °C MOSFET

New Product
SUD17N25-165
Vishay Siliconix
N-Channel 250-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V
DS
(V)
250
r
DS(on)
(Ω)
0.165 at V
GS
= 10 V
I
D
(A)
17
FEATURES
• TrenchFET
®
Power MOSFET
• 175 °C Junction Temperature
RoHS
COMPLIANT
D
TO-252
G
Drain Connected to Tab
G
D
S
S
N-Channel MOSFET
Top View
Ordering Information:
SUD17N25-165-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175 °C)
b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 125 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
Limit
250
± 20
17
9.8
20
17
5
1.25
136
b
3
a
- 55 to 175
mJ
W
°C
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
a
Junction-to-Case (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
b. See SOA curve for voltage derating.
t
10 sec
Steady State
Symbol
R
thJA
R
thJC
Typical
15
40
0.85
Maximum
18
50
1.1
°C/W
Unit
Document Number: 72851
S-71660-Rev. B, 06-Aug-07
www.vishay.com
1

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