SUM18N25-165
New Product
Vishay Siliconix
N-Channel 250-V (D-S) 175_C MOSFET
FEATURES
PRODUCT SUMMARY
V
(BR)DSS
(V)
250
r
DS(on)
(W)
0.165 @ V
GS
= 10 V
I
D
(A)
18
D
TrenchFETr Power MOSFET
D
175_C Junction Temperature
D
New Low Thermal Resistance Package
APPLICATIONS
D
Automotive Such As:
−
Diesel Fuel Injection
−
High-Side Switch
−
Motor Drives
D
TO-263
G
G
D S
S
Top View
Ordering Information: SUM18N25-165—E3 (Lead Free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
Pulsed Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche
Energy
a
L = 0.1 mH
T
C
= 25_C
T
A
= 25_C
c
T
C
= 25_C
T
C
= 125_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
Limit
250
"20
18
10.4
20
5
1.25
150
b
3.75
−55
to 175
Unit
V
A
mJ
W
_C
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Duty cycle
v
1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).
Document Number: 72849
S-40467—Rev. A, 15-Mar-04
www.vishay.com
PCB Mount (TO-263)
c
Symbol
R
thJA
R
thJC
Limit
40
1.0
Unit
_C/W
1
SUM18N25-165
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
=25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
DS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 250 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
g
On-State Drain Current
a
I
DSS
I
D(on)
V
DS
= 250 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 250 V, V
GS
= 0 V, T
J
= 175_C
V
DS
w
15 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 14 A
Drain-Source On-State Resistance
a
Forward Transconductance
a
r
DS(on)
g
fs
V
GS
= 10 V, I
D
= 14 A, T
J
= 125_C
V
GS
= 10 V, I
D
= 14 A, T
J
= 175_C
V
DS
= 15 V, I
D
= 18 A
36
20
0.130
0.165
0.347
0.462
S
W
250
2.5
4
"100
1
50
250
A
m
mA
V
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 125 V, R
L
= 7.0
W
I
D
^
18 A, V
GEN
= 10 V, R
g
= 2.5
W
V
DS
= 125 V, V
GS
= 10 V, I
D
= 18 A
,
,
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1950
160
70
30
10
10
1.6
15
130
30
100
25
195
45
150
ns
W
45
nC
pF
Source-Drain Diode Ratings and Characteristics (T
C
= 25_C)
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= 18 A, di/dt = 100 A/ms
I
F
= 18 A, V
GS
= 0 V
1.0
115
10
0.58
18
20
1.5
175
15
1.3
A
V
ns
A
mC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.com
2
Document Number: 72849
S-40467—Rev. A, 15-Mar-04
SUM18N25-165
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
V
GS
= 10 thru 6 V
5V
I D
−
Drain Current (A)
20
Vishay Siliconix
Transfer Characteristics
16
I D
−
Drain Current (A)
16
12
12
8
8
T
C
= 125_C
4
25_C
−55_C
0
4
4V
0
0
4
8
12
16
20
V
DS
−
Drain-to-Source Voltage (V)
0
1
2
3
4
5
6
V
GS
−
Gate-to-Source Voltage (V)
Transconductance
60
T
C
=
−55_C
50
g fs
−
Transconductance (S)
40
30
20
10
0
0
4
8
12
16
20
25_C
125_C
r DS(on)
−
On-Resistance (
W
)
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
0
On-Resistance vs. Drain Current
V
GS
= 10 V
4
8
12
16
20
I
D
−
Drain Current (A)
2800
I
D
−
Drain Current (A)
20
V
DS
= 125 V
I
D
= 17 A
Capacitance
Gate Charge
V GS
−
Gate-to-Source Voltage (V)
C
−
Capacitance (pF)
2100
16
C
iss
12
1400
8
700
C
rss
C
oss
0
0
40
80
120
160
200
V
DS
−
Drain-to-Source Voltage (V)
4
0
0
8
16
24
32
40
48
56
Q
g
−
Total Gate Charge (nC)
Document Number: 72849
S-40467—Rev. A, 15-Mar-04
www.vishay.com
3
SUM18N25-165
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.8
2.4
r
DS(on)
−
On-Resiistance
(Normalized)
2.0
1.6
1.2
0.8
0.4
−50
V
GS
= 10 V
I
D
= 18 A
I S
−
Source Current (A)
100
Source-Drain Diode Forward Voltage
T
J
= 150_C
10
T
J
= 25_C
−25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
V
SD
−
Source-to-Drain Voltage (V)
T
J
−
Junction Temperature (_C)
100
Avalanche Current vs. Time
325
Drain Source Breakdown vs.
Junction Temperature
10
I
Dav
(a)
310
I
D
= 10 mA
I
AV
(A) @ T
A
= 25_C
1
V
(BR)DSS
(V)
295
280
0.1
I
AV
(A) @ T
A
= 150_C
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
t
in
(Sec)
265
250
−50
−25
0
25
50
75
100
125
150
175
T
J
−
Junction Temperature (_C)
www.vishay.com
4
Document Number: 72849
S-40467—Rev. A, 15-Mar-04
SUM18N25-165
New Product
THERMAL RATINGS
Maximum Drain Current vs. Case Temperature
Safe Operating Area
Vishay Siliconix
20
100
16
I D
−
Drain Current (A)
I D
−
Drain Current (A)
10
Limited by r
DS(on)
10
ms
100
ms
12
8
1
T
C
= 25_C
Single Pulse
1 ms
10 ms
100 ms, dc
4
0
0
25
50
75
100
125
150
175
T
C
−
Case Temperature (_C)
0.1
0.1
1
10
100
1000
V
DS
−
Drain-to-Source Voltage (V)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Case
0.01
10
−4
10
−3
10
−2
Square Wave Pulse Duration (sec)
10
−1
1
Document Number: 72849
S-40467—Rev. A, 15-Mar-04
www.vishay.com
5
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