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SUM75N15-18P

Description
VISHAY SILICONIX - SUM75N15-18P-E3 - N CHANNEL MOSFET; 150V; 75A; TO-263
Categorysemiconductor    Discrete semiconductor   
File Size110KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet View All

SUM75N15-18P Overview

VISHAY SILICONIX - SUM75N15-18P-E3 - N CHANNEL MOSFET; 150V; 75A; TO-263

SUM75N15-18P
Vishay Siliconix
N-Channel 150-V (D-S) MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
150
R
DS(on)
(Ω)
0.018 at V
GS
= 10 V
I
D
(A)
75
d
Q
g
(Typ.)
64
FEATURES
• TrenchFET
®
Power MOSFET
• 100 % R
g
and UIS Tested
RoHS
COMPLIANT
APPLICATIONS
• Primary Side Switch
• Power Supplies
TO-263
D
G
G
D S
S
Ordering Information:
SUM75N15-18P-E3 (Lead (Pb)-free)
N-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
c
T
C
= 25 °C
T
C
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
Limit
150
± 20
75
d
70
180
50
125
312.5
b
3.12
- 55 to 150
mJ
W
°C
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
c
Junction-to-Case (Drain)
Notes:
a. Duty cycle
1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Package limited.
Symbol
R
thJA
R
thJC
Limit
40
0.4
Unit
°C/W
Document Number: 69995
S-82349-Rev. B, 22-Sep-08
www.vishay.com
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