T40HFL, T70HFL, T85HFL Series
Vishay Semiconductors
Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A
FEATURES
• Fast recovery time characteristics
• Electrically isolated base plate
• 3500 V
RMS
isolating voltage
• Standard JEDEC package
• Simplified mechanical designs, rapid assembly
• Large creepage distances
• UL E78996 approved
D-55
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
The series of T-modules uses fast recovery power diodes in
a single diode configuration. The semiconductors are
electrically isolated from the metal base, allowing common
heatsink and compact assemblies to be built.
These single diode modules can be used in conjunction with
the thyristor modules as a freewheel diode. Application
includes self-commutated inverters, DC choppers, motor
control, inductive heating and electronic welders. These
modules are intended for those applications where very fast
recovery characteristics are required and for general power
switching applications.
PRODUCT SUMMARY
I
F(AV)
Type
40 A/70 A/85 A
Modules - Diode, Fast
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
I
F(RMS)
50 Hz
I
FSM
60 Hz
50 Hz
60 Hz
V
RRM
t
rr
T
J
Range
Range
Range
CHARACTERISTICS
T40HFL
40
63
475
500
1130
1030
T70HFL
70
110
830
870
3460
3160
100 to 1000
200 to 1000
- 40 to 125
T85HFL
85
133
1300
A
1370
8550
7810
V
ns
°C
A
2
s
UNITS
A
A
I
2
t
Document Number: 93184
Revision: 19-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
T40HFL, T70HFL, T85HFL Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
10
20
T40HFL..
T70HFL..
T85HFL..
40
60
80
100
t
rr
CODE
S02, S05, S10
S02, S05, S10
S02, S05, S10
S02, S05, S10
S05, S10
S05, S10
V
RRM,
MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
100
200
400
600
800
1000
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
150
300
500
100
700
900
1100
I
RRM
MAXIMUM
AT T
J
= 25 °C
μA
Fast Recovery Diodes
(T-Modules), 40 A/70 A/85 A
FORWARD CONDUCTION
PARAMETER
Maximum average
forward current
at case temperature
Maximum RMS
forward current
SYMBOL
I
F(AV)
TEST CONDITIONS
180° conduction, half sine wave
70
I
F(RMS)
t = 10 ms
Maximum peak, one-cycle
forward, non-repetitive
surge current
t = 8.3 ms
I
FSM
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t for fusing
I
2
t
t = 10 ms
t = 8.3 ms
Maximum I
2
√t
for fusing
Low level value of
threshold voltage
High level value of
threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward
voltage drop
I
2
√t
V
F(TO)1
V
F(TO)2
r
f1
r
f2
V
FM
100 % V
RRM
reapplied
800
730
11 300
0.82
0.84
7.0
6.8
1.60
2450
2230
34 600
0.87
0.90
2.77
2.67
1.73
6050
5520
85 500
0.84
V
T
J
= 25 °C, (I >
π
x I
F(AV)
)
T
J
= 25 °C, (16.7 % x
π
x I
F(AV)
< I <
π
x I
F(AV)
)
T
J
= 25 °C, (I >
π
x I
F(AV)
)
I
FM
=
π
x I
F(AV)
, T
J
= 25 °C, t
p
= 400 μs square wave
Average power = V
F(TO)
x I
F(AV)
+ r
f
x (I
F(RMS)
)
2
0.86
2.15
mΩ
2.07
1.55
V
A
2
√s
100 % V
RRM
reapplied
No voltage
reapplied
400
Sinusoidal half wave,
initial T
J
= T
J
maximum
420
1130
1030
700
730
3460
3160
1100
1150
8550
7810
A
2
s
No voltage
reapplied
63
475
500
110
830
870
133
1300
1370
A
°C
A
T40HFL
40
T70HFL
70
T85HFL
85
UNITS
A
t = 0.1 ms to 10 ms, no voltage reapplied
T
J
= 25 °C, (16.7 % x
π
x I
F(AV)
< I <
π
x I
F(AV)
)
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93184
Revision: 19-May-10
T40HFL, T70HFL, T85HFL Series
Fast Recovery Diodes
(T-Modules), 40 A/70 A/85 A
REVERSE RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
(1)
T
J
= 25 °C, -dI
F
/dt = 100 A/μs
I
F
= 1 A to V
R
= 30 V
T
J
= 25 °C, -dI
F
/dt = 25 A/μs
I
FM
=
π
x rated I
F(AV)
, V
R
= - 30 V
T
J
= 25 °C, -dI
F
/dt = 100 A/μs
I
F
= 1 A to V
R
= 30 V
T
J
= 25 °C, -dI
F
/dt = 25 A/μs
I
FM
=
π
x rated I
F(AV)
, V
R
= - 30 V
T40HFL
S02
70
200
0.25
0.55
S05
110
500
0.4
2.0
S10
270
1000
1.35
8.0
S02
70
200
0.25
0.6
T70HFL
S05
110
500
0.4
2.1
S10
270
1000
1.35
8.5
S02
80
200
0.3
0.8
T85HFL
S05
120
500
0.6
3.5
S10
290
ns
1000
1.6
μC
1.5
UNITS
Vishay Semiconductors
Maximum reverse
recovery time
t
rr
Maximum reverse
recovery charge
Q
rr
Note
(1)
Tested on LEM 300 A diodemeter tester
BLOCKING
PARAMETER
Maximum peak reverse leakage current
RMS isolation voltage
SYMBOL
I
RRM
V
ISOL
TEST CONDITIONS
T
J
= 125 °C
50 Hz, circuit to base, all terminals
shorted, T
J
= 25 °C, t = 1 s
T40HFL T70HFL T85HFL
20
3500
UNITS
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction operating temperature range
Storage temperature range
Maximum internal thermal resistance,
junction to case per module
Thermal resistance,
case to heatsink per module
base to heatsink
Mounting torque ± 10 %
busbar to terminal
Approximate weight
Case style
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, flat, smooth
and greased
M3.5 mounting screws
(1)
Non-lubricated threads
M5 screws terminals
Non-lubricated threads
See dimensions -
link at the end of datasheet
0.85
TEST CONDITIONS
T40HFL T70HFL T85HFL
- 40 to 125
- 40 to 150
0.53
0.2
1.3 ± 10 %
Nm
3 ± 10 %
54
19
D-55 (T-module)
g
oz.
0.46
K/W
UNITS
°C
Note
(1)
A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of
the compound
ΔR
CONDUCTION
DEVICES
T40HFL
T70HFL
T85HFL
SINUSOIDAL CONDUCTION AT T
J
MAXIMUM
180°
0.06
0.05
0.04
120°
0.08
0.06
0.05
90°
0.10
0.08
0.06
60°
0.14
0.11
0.09
30°
0.24
0.19
0.15
RECTANGULAR CONDUCTION AT T
J
MAXIMUM
180°
0.05
0.04
0.03
120°
0.08
0.06
0.05
90°
0.10
0.08
0.07
60°
0.15
0.12
0.09
30°
0.24
0.19
0.015
K/W
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Document Number: 93184
Revision: 19-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
T40HFL, T70HFL, T85HFL Series
Vishay Semiconductors
Maximum Allowab le Case T
emperature (°C)
Fast Recovery Diodes
(T-Modules), 40 A/70 A/85 A
Maximum Allowa ble Cas T
e emperature (°C)
130
120
110
100
Conduction Period
130
120
110
100
90
80
70
60
50
0
10
T
40HF S
L.. eries
R
thJC
(DC) = 0.85 K/ W
T
70HFL.. S
eries
R
thJC
(DC) = 0.53 K/ W
Conduc tion Angle
90
80
30°
70
60
50
0
20
40
60
80
100
120
Average Forward Current (A)
60°
90°
120°
180°
DC
30°
60°
90°
120°
180°
20
30
40
50
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Maximum Allowa ble Case T
emperature (°C)
Maximum Allowable Case T
emperature (°C)
130
120
110
100
Conduc tion Period
130
120
110
100
90
80
T
40HF S
L.. eries
R
thJC
(DC) = 0.85 K/ W
T
85HF S
L.. eries
R
thJC
(DC) = 0.46 K/ W
Conduc tion Angle
90
80
30°
70
60
50
0
10
20
30
40
50
60
70
Average F
orward Current (A)
60°
90°
120°
180°
DC
30°
70
60
50
0
10
20
30
40
60°
90°
120°
180°
50
60
70
80
90
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Current Ratings Characteristics
Maximum Allowable Case T
emp erature (°C)
120
110
100
90
80
70
60
50
0
10
T
70HFL.. S
eries
R
thJC
(DC) = 0.53 K/ W
Maximum Allowable Case T
emperature (°C)
130
130
120
110
100
Conduction Period
T
85HF S
L.. eries
R
thJC
(DC) = 0.46 K/ W
Conduction Angle
90
80
30°
70
60
50
0
20
40
60
80
100
120
140
Average Forward Current (A)
60°
90°
120°
180°
DC
30°
60°
90°
120°
180°
20
30
40
50
60
70
80
Average Forward Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 6 - Current Ratings Characteristics
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93184
Revision: 19-May-10
T40HFL, T70HFL, T85HFL Series
Fast Recovery Diodes
(T-Modules), 40 A/70 A/85 A
Maximum Average F
orward Power Lo ss (W)
Maximum Average Forward Power Los (W)
s
Vishay Semiconductors
70
60
50
40
30
20
10
0
0
5
180°
120°
90°
60°
30°
RMSLimit
140
120
100
80
60
40
20
0
0
20
40
60
80
100
120
Average F
orward Current (A)
RMS Limit
Conduc tion Period
DC
180°
120°
90°
60°
30°
Conduc tion Angle
T
40HF S
L.. eries
T
J
= 125°C
10
15
20
25
30
35
40
T
70HF S
L.. eries
T
J
= 125°C
Average F
orward Current (A)
Fig. 7 - Forward Power Loss Characteristics
Fig. 10 - Forward Power Loss Characteristics
Ma ximum Average F
orward Power Lo s (W)
s
90
80
70
60
50
40
30
20
10
0
0
10
20
30
40
50
60
70
Average F
orward Current (A)
Conduc tion Period
Maximum Average Forward Power Loss (W)
110
100
90
80
70
60
50
40
30
20
10
0
0
10
20
30
40
50
60
70
80
90
Average Forward Current (A)
T
85HFL.. S
eries
T
J
= 125°C
Conduc tion Angle
DC
180°
120°
90°
60°
30°
RMS Limit
180°
120°
90°
60°
30°
RMS Limit
T
40HF S
L.. eries
T
J
= 125°C
Fig. 8 - Forward Power Loss Characteristics
Fig. 11 - Forward Power Loss Characteristics
Maximum Average Forward Power Loss (W)
Maximum Average Forward Power Loss (W)
100
90
80
70
60
50
40
30
20
10
0
0
10
180°
120°
90°
60°
30°
RMS Limit
160
140
120
100
80
RMSLimit
60
Conduc tion Period
DC
180°
120°
90°
60°
30°
Conduc tion Angle
40
20
0
0
20
40
60
80
100
120
140
Average F
orward Current (A)
T
85HFL.. S
eries
T
J
= 125°C
T
70HF S
L.. eries
T = 125°C
J
20
30
40
50
60
70
Average Forward Current (A)
Fig. 9 - Forward Power Loss Characteristics
Fig. 12 - Forward Power Loss Characteristics
Document Number: 93184
Revision: 19-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
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